Back to Search
Start Over
ASYMMETRIC TUNNELING SOURCE MOSFETS:: A NOVEL DEVICE SOLUTION FOR SUB-100NM CMOS TECHNOLOGY.
- Source :
-
International Journal of High Speed Electronics & Systems . Mar2006, Vol. 16 Issue 1, p95-102. 8p. - Publication Year :
- 2006
-
Abstract
- The paper presents a simulation study of the physics and performance of novel asymmetric tunneling solutions for the sub-100nm MOSFET technology. Two device structures have been investigated: Schottky Tunneling Source MOSFET and band-to-band P+-N+ Tunneling Source MOSFET. The Schottky MOSFET exhibits degraded Ion and subthreshold swing (in spite of improved DIBL). On the other hand, the novel PNPN MOSFET shows high Ion/Ioff and steep subthreshold behavior. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01291564
- Volume :
- 16
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- International Journal of High Speed Electronics & Systems
- Publication Type :
- Academic Journal
- Accession number :
- 22028275
- Full Text :
- https://doi.org/10.1142/S0129156406003552