Laser performance of Nd:LaB3O6 cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber.

Passively Q-switched laser oscillation at 1060 nm from an unprocessed Nd:LaB3O6 cleavage microchip with a Cr4+:YAG saturable absorber has been demonstrated. The influence of absorbed pump power, output coupler transmission and cavity length on the output pulse characteristics has been investigated. For a plano-concave cavity with a cavity length of 28 mm, pulse with 100 mW average output power, 4.0 μJ energy, 17 ns duration, 25 kHz repetition rate, and 0.24 kW, peak power was obtained at the absorbed pump power of 1.42 W and output coupler transmission of 3.5%. For a plano-plano cavity with a cavity length of 5 mm, pulse with 85 mW average output power, 2.1 μJ energy, 2.3 ns duration, 40 kHz repetition rate, and 0.89 kW, peak power was obtained at the absorbed pump power of 1.42 W and output coupler transmission of 5.6%. Because a chopper with a 5% duty cycle was employed in the experiments to reduce the influence of pump-induced thermal loading, the above average output powers were obtained at the 5% duty cycle and extrapolated to 100%. [ABSTRACT FROM AUTHOR]