Cite
Laser performance of Nd:LaB3O6 cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber.
MLA
Chen, Y. J., et al. “Laser Performance of Nd:LaB3O6 Cleavage Microchips Passively Q-Switched with a Cr4+:YAG Saturable Absorber.” Applied Physics B: Lasers & Optics, vol. 83, no. 2, May 2006, pp. 195–201. EBSCOhost, https://doi.org/10.1007/s00340-006-2174-5.
APA
Chen, Y. J., Gong, X. H., Lin, Y. F., Luo, Z. D., Tan, Q. G., & Huang, Y. D. (2006). Laser performance of Nd:LaB3O6 cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber. Applied Physics B: Lasers & Optics, 83(2), 195–201. https://doi.org/10.1007/s00340-006-2174-5
Chicago
Chen, Y. J., X. H. Gong, Y. F. Lin, Z. D. Luo, Q. G. Tan, and Y. D. Huang. 2006. “Laser Performance of Nd:LaB3O6 Cleavage Microchips Passively Q-Switched with a Cr4+:YAG Saturable Absorber.” Applied Physics B: Lasers & Optics 83 (2): 195–201. doi:10.1007/s00340-006-2174-5.