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Growth kinetics study in halide chemical vapor deposition of SiC
- Source :
-
Journal of Crystal Growth . Oct2005, Vol. 284 Issue 1/2, p112-122. 11p. - Publication Year :
- 2005
-
Abstract
- Abstract: Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150°C. High-quality SiC crystals were deposited at growth rates in the 100–300μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations. [Copyright &y& Elsevier]
- Subjects :
- *NONMETALS
*CHEMICAL elements
*SILICON
*VAPOR-plating
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 284
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 18360578
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2005.06.027