Annealing effects on 100 keV silicon negative ions implanted SiO2 thin films.

SiO2 thin film of thickness 300 nm grown on p-type silicon substrate was implanted with 100 keV silicon negative ions for the fluences of 1 × 1016, 5 × 1016, and 1 × 1017 ions cm−2. The implanted samples were investigated using an energy-dispersive X-ray (EDX) spectroscopic technique, and the samples were annealed at a temperature of 900 oC under N2 ambient. Ultraviolet–visible near infrared (UV-Vis-NIR) spectroscopy has been used to investigate the implanted SiO2 thin film samples before and after thermal annealing. EDX results revealed an increase in the atomic percentage and weight percentage of silicon ions as compared to oxygen ions in SiO2 thin film. This may be due to the increase in the concentration of silicon ions with the increase of implanted ion fluences within the SiO2 thin film. UV-Vis-NIR studies showed higher transmittance for thermally annealed samples as compared to non-annealed samples. This may be attributed to the creation of a new SiOx phase in the SiO2 matrix at higher temperatures. UV-Vis-NIR studies also exhibited an increase in the energy band gap value after thermal annealing. This effect may be related to the formation of silicon nanoclusters in SiO2 thin film. [ABSTRACT FROM AUTHOR]