Cite
Annealing effects on 100 keV silicon negative ions implanted SiO2 thin films.
MLA
Vishwakarma, S. B., et al. “Annealing Effects on 100 KeV Silicon Negative Ions Implanted SiO2 Thin Films.” Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, Aug. 2024, pp. 1–8. EBSCOhost, https://doi.org/10.1080/10420150.2024.2397140.
APA
Vishwakarma, S. B., Dubey, S. K., Dubey, R. L., Yadav, A., Sulania, I., & Kanjilal, D. (2024). Annealing effects on 100 keV silicon negative ions implanted SiO2 thin films. Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 1–8. https://doi.org/10.1080/10420150.2024.2397140
Chicago
Vishwakarma, S. B., S. K. Dubey, R. L. Dubey, A. Yadav, I. Sulania, and D. Kanjilal. 2024. “Annealing Effects on 100 KeV Silicon Negative Ions Implanted SiO2 Thin Films.” Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, August, 1–8. doi:10.1080/10420150.2024.2397140.