Back to Search
Start Over
Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering
- Source :
-
Journal of Alloys & Compounds . Jul2005, Vol. 397 Issue 1/2, p231-235. 5p. - Publication Year :
- 2005
-
Abstract
- Abstract: Modulation-doped Al0.22Ga0.78N/GaN heterostructure with 1000Å Si-doped n-Al0.22Ga0.78N barrier (n-AlGaN) were deposited on (0001)-oriented sapphire (α-Al2O3) by means of atmosphere-pressure metal-organic chemical vapor deposition. The reciprocal space mappings of symmetric reflection (0002) and asymmetric reflection (10 4) were measured with high resolution X-ray diffraction. The results indicate that the microstructure and strain status of barrier correlate to that of the underlying i-GaN layer. The barrier holds an “abnormal” strain-relaxation status, which probably results from the internal defects of n-AlGaN and the strain relaxation status at the i-GaN/α-Al2O3 interfaces. The results from grazing incidence X-ray diffraction show that the strain in barrier is nonuniform, which is consistent with the results from the reciprocal space mappings. [Copyright &y& Elsevier]
- Subjects :
- *RANGE management
*VAPOR-plating
*OPTICAL diffraction
*ORGANIC compounds
Subjects
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 397
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 17951601
- Full Text :
- https://doi.org/10.1016/j.jallcom.2004.11.072