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Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
- Source :
-
Microelectronic Engineering . Jun2005, Vol. 80, p386-389. 4p. - Publication Year :
- 2005
-
Abstract
- Abstract: In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior. [Copyright &y& Elsevier]
- Subjects :
- *SILICON
*DIELECTRICS
*ELECTRODES
*NITRIDES
Subjects
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 80
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 17923806
- Full Text :
- https://doi.org/10.1016/j.mee.2005.04.026