Cite
Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
MLA
Rudenko, T., et al. “Effective Mobility in FinFET Structures with HfO2 and SiON Gate Dielectrics and TaN Gate Electrode.” Microelectronic Engineering, vol. 80, June 2005, pp. 386–89. EBSCOhost, https://doi.org/10.1016/j.mee.2005.04.026.
APA
Rudenko, T., Collaert, N., De Gendt, S., Kilchytska, V., Jurczak, M., & Flandre, D. (2005). Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode. Microelectronic Engineering, 80, 386–389. https://doi.org/10.1016/j.mee.2005.04.026
Chicago
Rudenko, T., N. Collaert, S. De Gendt, V. Kilchytska, M. Jurczak, and D. Flandre. 2005. “Effective Mobility in FinFET Structures with HfO2 and SiON Gate Dielectrics and TaN Gate Electrode.” Microelectronic Engineering 80 (June): 386–89. doi:10.1016/j.mee.2005.04.026.