A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application.

Recent developments in flexible memories, neuromorphic computing, and other fields have generated a lot of interest in memristive devices based on two-dimensional materials. Due to its capacity for data storage and quick working speed, two-terminal non-volatile memory devices are more efficient and incredible. The need for memory that is flexible, low-powered, and ultra-thin is rising as a result of the rapidly developing fields of healthcare, wearable electronics, and the Internet of Things. The current study observes the effects of pure hexagonal boron nitride (hBN) inclusion on the resistive switching properties of tin oxide (SnO2)-based flexible resistive memory device, which was synthesized by a straightforward hydrothermal method. The synthesized nanocomposite powders were characterized by X-ray diffraction and Raman spectroscopic methods. A pure SnO2 and SnO2-hBN (5, 7, and 10 wt.%) nanocomposite film was spin-coated on an ITO-PET flexible substrate to create the memory device. To finish the memory device, thermal evaporation was used to create Al top electrodes with a thickness of less than 100 nm. After comparing the resistive switching performance of the created devices, it was found that the memory device using 7% hBN in SnO2 had a higher ION/IOFF ratio of 1000, whereas the samples including 5 and 10 wt.% hBN had ratios of 96 and 10, respectively. In addition, the retention and endurance behaviour of the fabricated 7%SnO2-hBN composite film-based device was studied for up to 1.5 × 104 and 100 cycles, respectively, with no degradation in the memory window. It has been noted that the current metal oxide–2D hybrid nanocomposite is a promising option for low-power, flexible, and enduring non-volatile memory applications. [ABSTRACT FROM AUTHOR]