A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application.

MLA

Komal, Km., et al. “A Flexible Memory Device Made of SnO2-HBN Nanocomposite Exhibits Stable Resistive Switching Application.” Journal of Materials Science, vol. 59, no. 29, Aug. 2024, pp. 13508–31. EBSCOhost, https://doi.org/10.1007/s10853-024-09976-9.

APA

Komal, K., Singh, M., & Singh, B. (2024). A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application. Journal of Materials Science, 59(29), 13508–13531. https://doi.org/10.1007/s10853-024-09976-9

Chicago

Komal, Km., Mukhtiyar Singh, and Bharti Singh. 2024. “A Flexible Memory Device Made of SnO2-HBN Nanocomposite Exhibits Stable Resistive Switching Application.” Journal of Materials Science 59 (29): 13508–31. doi:10.1007/s10853-024-09976-9.