Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction.

A novel PIN-junction gate 4H-SiC UMOSFET with integrated heterojunction (PJG-UMOSFET) is proposed and numerically studied. The integrated heterojunction diode effectively suppresses the conduction of the intrinsic PN diode in the reverse conduction state of PJG-UMOSFET. The device simulation results show that the on-resistance (R on) of the device is reduced by about 20.5 % compared with the traditional SiC UMOSFET, and there is almost no specific conduction resistance decrease. The reverse recovery time (t π) and reverse recovery charge (Q π) are reduced by 42.1 % and 68.4 %, and the gate-to-drain charge is reduced by 41.2 %. In addition, a feasible manufacturing process method for the proposed device is provided. • The reverse recovery performance of the proposed SiC MOSFET is significantly improved. • The gate charge performance of the proposed SiC MOSFET is significantly improved. • The reverse I-V performance of the proposed SiC MOSFET is significantly improved. • The improvement is mainly due to the PIN-junction gate and the heterojunction. [ABSTRACT FROM AUTHOR]