Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction.

MLA

Wang, Qing-yuan, et al. “Performance Enhancement of 1.7 KV MOSFET Using PIN-Junction Gate and Integrated Heterojunction.” Microelectronics Reliability, vol. 152, Jan. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.microrel.2023.115305.

APA

Wang, Q., Wang, Y., Fei, X.-X., Li, X., Yang, J., & Yu, C. (2024). Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction. Microelectronics Reliability, 152, N.PAG. https://doi.org/10.1016/j.microrel.2023.115305

Chicago

Wang, Qing-yuan, Ying Wang, Xin-Xing Fei, Xing-ji Li, Jian-qun Yang, and Cheng-hao Yu. 2024. “Performance Enhancement of 1.7 KV MOSFET Using PIN-Junction Gate and Integrated Heterojunction.” Microelectronics Reliability 152 (January): N.PAG. doi:10.1016/j.microrel.2023.115305.