PROCESSES FOR THINNING AND POLISHING HIGHLY WARPED DIE TO A NEARLY CONSISTENT THICKNESS: PART II.

The article presents the processes and considerations for thinning a large, warped die to a uniform thickness of 50 +/- 2 microns, and suggests that the entire die can be thinned to 50 microns for initial evaluation of silicon thickness. It further provides guidance on the limits of thinning processes, the selection of the size of the area of interest, and the importance of limiting the area thinned to a small fraction of the die surface.