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Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections.
- Source :
-
IEEE Transactions on Electron Devices . Jun2022, Vol. 69 Issue 6, p3014-3021. 8p. - Publication Year :
- 2022
-
Abstract
- A universal equation for the charge-voltage characteristics in the multigate metal oxide semiconductor (MOS) structure with an arbitrary cross section is presented. A generalized coordinate is proposed and the Poisson equation is integrated with a weighting factor related with the generalized coordinate and the electric field. A compact charge model is derived and analytic and numerical examples for various MOS structures are shown. [ABSTRACT FROM AUTHOR]
- Subjects :
- *METAL oxide semiconductors
*ELECTRIC fields
*SEMICONDUCTOR devices
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 157582702
- Full Text :
- https://doi.org/10.1109/TED.2022.3164862