Cite
Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections.
MLA
Lee, Kwang-Woon, and Sung-Min Hong. “Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections.” IEEE Transactions on Electron Devices, vol. 69, no. 6, June 2022, pp. 3014–21. EBSCOhost, https://doi.org/10.1109/TED.2022.3164862.
APA
Lee, K.-W., & Hong, S.-M. (2022). Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections. IEEE Transactions on Electron Devices, 69(6), 3014–3021. https://doi.org/10.1109/TED.2022.3164862
Chicago
Lee, Kwang-Woon, and Sung-Min Hong. 2022. “Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections.” IEEE Transactions on Electron Devices 69 (6): 3014–21. doi:10.1109/TED.2022.3164862.