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Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties.
- Source :
-
IEEE Transactions on Electron Devices . Jun2021, Vol. 68 Issue 6, p3124-3128. 5p. - Publication Year :
- 2021
-
Abstract
- In this brief, we computationally examine electrical characteristics of stacked gate-all-around Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) source/drain (S/D) by increasing the number of channels (NCs) and their impacts on digital circuits. The ON-current (ION) and circuit performances of the NS-FETs without the MSW S/D are limited to three channels due to the electrostatic potential decreasing from the top contacts to the bottom S/D side of NS-FETs; however, the MSW S/D can improve the Ion with increasing the NCs over three channels because of low resistivity of tungsten (5.6 × 10−6 Ω ⋅ cm) in the sidewall of S/D and then the circuit performances can be boost by the MSW S/D structure of the stacked GAA NS-FETs over three channels. For example, up to six channels of the NS-FETs with the MSW S/D, the frequency of ring oscillator is 57% increase, compared with the case without MSW S/D. The results of this study can be considered to design the S/D structure of the stacked GAA NS-FETs in emerging device technologies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778264
- Full Text :
- https://doi.org/10.1109/TED.2021.3074126