Cite
Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties.
MLA
Sung, Wen-Li, and Yiming Li. “Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties.” IEEE Transactions on Electron Devices, vol. 68, no. 6, June 2021, pp. 3124–28. EBSCOhost, https://doi.org/10.1109/TED.2021.3074126.
APA
Sung, W.-L., & Li, Y. (2021). Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties. IEEE Transactions on Electron Devices, 68(6), 3124–3128. https://doi.org/10.1109/TED.2021.3074126
Chicago
Sung, Wen-Li, and Yiming Li. 2021. “Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties.” IEEE Transactions on Electron Devices 68 (6): 3124–28. doi:10.1109/TED.2021.3074126.