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Low temperature annealing of electron irradiation induced defects in 4H-SiC.
- Source :
-
Applied Physics Letters . 10/25/2004, Vol. 85 Issue 17, p3780-3782. 3p. 1 Chart, 3 Graphs. - Publication Year :
- 2004
-
Abstract
- Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec-0.39 eV disappears in the temperature range 360–400 K, and some rearrangement of the peak S3, associated with the defect Z1/Z2 with energy level at Ec-0.5/Ec-0.65 eV occurs in the temperature interval 400–470 K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at Ec-0.39 eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretation of the annealing of peak S2 on a microscopic scale is given. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14909830
- Full Text :
- https://doi.org/10.1063/1.1810627