Cite
Low temperature annealing of electron irradiation induced defects in 4H-SiC.
MLA
Castaldini, Antonio, et al. “Low Temperature Annealing of Electron Irradiation Induced Defects in 4H-SiC.” Applied Physics Letters, vol. 85, no. 17, Oct. 2004, pp. 3780–82. EBSCOhost, https://doi.org/10.1063/1.1810627.
APA
Castaldini, A., Cavallini, A., Rigutti, L., & Nava, F. (2004). Low temperature annealing of electron irradiation induced defects in 4H-SiC. Applied Physics Letters, 85(17), 3780–3782. https://doi.org/10.1063/1.1810627
Chicago
Castaldini, Antonio, Anna Cavallini, Lorenzo Rigutti, and Filippo Nava. 2004. “Low Temperature Annealing of Electron Irradiation Induced Defects in 4H-SiC.” Applied Physics Letters 85 (17): 3780–82. doi:10.1063/1.1810627.