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Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric.
- Source :
-
Superlattices & Microstructures . Nov2020, Vol. 147, pN.PAG-N.PAG. 1p. - Publication Year :
- 2020
-
Abstract
- The silicene/La 2 O 3 heterojunctions envision promising applications in novel integrated functional nanodevices. The electronic properties of silicene, La 2 O 3 , and silicene/La 2 O 3 heterojunctions are investigated by first-principles calculations. The silicene/La-terminated La 2 O 3 heterojunction presents a 1.753 eV band gap, which is desired for silicene-based semiconductor devices. The effects of biaxial strain and external electric field are studied for the band structure of silicene/La 2 O 3 heterojunction. The band gap values of silicene/La 2 O 3 heterojunction could be effectively modulated. These findings indicate the potential application prospects of silicene-based field effect transistor with La 2 O 3 gate dielectric in nanoscale devices. • The silicene/La-terminated La 2 O 3 heterojunction presents a desired 1.753 eV band gap. • External electric field induces semiconductor–metal transitions. • The band gap values of silicene/La 2 O 3 heterojunction could be effectively modulated by biaxial strains. • The silicene/La 2 O 3 heterojunction has a potential application in silicene-based MOSFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07496036
- Volume :
- 147
- Database :
- Academic Search Index
- Journal :
- Superlattices & Microstructures
- Publication Type :
- Academic Journal
- Accession number :
- 146683773
- Full Text :
- https://doi.org/10.1016/j.spmi.2020.106686