Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric.

MLA

Xue, Mengmeng, et al. “Tunable Electronic Properties of Silicene Based Heterojunctions with Ultrathin High-к La2O3 Gate Dielectric.” Superlattices & Microstructures, vol. 147, Nov. 2020, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.spmi.2020.106686.

APA

Xue, M., Wei, M., Sheng, H., Bai, D., & Wang, J. (2020). Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric. Superlattices & Microstructures, 147, N.PAG. https://doi.org/10.1016/j.spmi.2020.106686

Chicago

Xue, Mengmeng, Mengjie Wei, Haohao Sheng, Dongmei Bai, and Jianli Wang. 2020. “Tunable Electronic Properties of Silicene Based Heterojunctions with Ultrathin High-к La2O3 Gate Dielectric.” Superlattices & Microstructures 147 (November): N.PAG. doi:10.1016/j.spmi.2020.106686.