Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers.

In this work, homogeneous surface oxidation of hafnium disulfide (HfS2) is achieved by an extremely simple thermal treatment, i.e., mild oxidization in air. Due to the high thermal stability of hafnium dioxide (HfO2), atomically flat HfO2 is formed on top of unoxidized HfS2 and unlimited layer-by-layer oxidation is observed. The thickness of HfO2 can be controlled by oxidation temperature and time. The HfO2 layer fabricated by the oxidation of HfS2 is smooth and atomically flat with roughness comparable to that of pristine HfS2. Growth of a high-quality, uniform, atomically flat oxide film on top of semiconductor is the first step for the fabrication of field effect transistors and metal-insulator-semiconductor devices. Thus, our results will facilitate the future fabrication of HfO2 films with atomic-scale thickness. [ABSTRACT FROM AUTHOR]