Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers.

MLA

Wang, Y. Y., et al. “Atomically Flat HfO2 Layer Fabricated by Mild Oxidation HfS2 with Controlled Number of Layers.” Journal of Applied Physics, vol. 127, no. 21, June 2020, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0003230.

APA

Wang, Y. Y., Huang, S. M., Yu, K., Jiang, J., Liang, Y., Zhong, B., Zhang, H., Kan, G. F., Quan, S. F., & Yu, J. (2020). Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers. Journal of Applied Physics, 127(21), 1–6. https://doi.org/10.1063/5.0003230

Chicago

Wang, Y. Y., S. M. Huang, K. Yu, J. Jiang, Y. Liang, B. Zhong, H. Zhang, G. F. Kan, S. F. Quan, and J. Yu. 2020. “Atomically Flat HfO2 Layer Fabricated by Mild Oxidation HfS2 with Controlled Number of Layers.” Journal of Applied Physics 127 (21): 1–6. doi:10.1063/5.0003230.