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Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates.
- Source :
-
IEEE Transactions on Electron Devices . Mar2018, Vol. 65 Issue 3, p1253-1257. 5p. - Publication Year :
- 2018
-
Abstract
- In this brief, we fabricated Ge (110)-oninsulator (-OI) structures on Si substrates via wafer bonding and epitaxial lift-off (ELO) process using Ge layer grown on GaAs for low-temperature layer stacking toward monolithic 3-D integration. We also systematically investigated the lateral etching behaviors of AlAs, which was used as a sacrificial layer in the ELO process, on GaAs (110) substrates. Fabricated Ge (110)-OI was analyzed by surface atomic force microscopy, X-ray diffraction, Raman shift, and transmission electron microscope analyses. We found that the 40-nm-thick ultrathin-body Ge (110)-OI has very high crystal quality, indicating our Ge stacking process is very stable. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 128703247
- Full Text :
- https://doi.org/10.1109/TED.2018.2793285