Cite
Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates.
MLA
Jae-Phil Shim, et al. “Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates.” IEEE Transactions on Electron Devices, vol. 65, no. 3, Mar. 2018, pp. 1253–57. EBSCOhost, https://doi.org/10.1109/TED.2018.2793285.
APA
Jae-Phil Shim, Gunwu Ju, Han-Sung Kim, Seong Kwang Kim, Jae-Hoon Han, Hyeong-Rak Lim, Hyung-Jun Kim, & Sang-Hyeon Kim. (2018). Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates. IEEE Transactions on Electron Devices, 65(3), 1253–1257. https://doi.org/10.1109/TED.2018.2793285
Chicago
Jae-Phil Shim, Gunwu Ju, Han-Sung Kim, Seong Kwang Kim, Jae-Hoon Han, Hyeong-Rak Lim, Hyung-Jun Kim, and Sang-Hyeon Kim. 2018. “Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates.” IEEE Transactions on Electron Devices 65 (3): 1253–57. doi:10.1109/TED.2018.2793285.