Single-Ended GAN Power Transistors Spawn New System-Level Capabilities.

The article focuses on the advantages offered by new single-ended transistors based on gallium-nitride (GaN) for building next-gen L-band systems. It is noted that the main reasons behind the surge in power is new transistors' greater levels of gain and efficiency. It is also mentioned that both LDMOS and GaN transistors have already replaced bipolar transistors used in traditional avionics and radar.