Single-Ended GAN Power Transistors Spawn New System-Level Capabilities.

MLA

McCANN, Damian, and Cang Nguyen. “Single-Ended GAN Power Transistors Spawn New System-Level Capabilities.” Microwaves & RF, vol. 56, no. 7, July 2017, pp. 29–80. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=asx&AN=124191610&authtype=sso&custid=ns315887.

APA

McCANN, D., & Cang Nguyen. (2017). Single-Ended GAN Power Transistors Spawn New System-Level Capabilities. Microwaves & RF, 56(7), 29–80.

Chicago

McCANN, Damian, and Cang Nguyen. 2017. “Single-Ended GAN Power Transistors Spawn New System-Level Capabilities.” Microwaves & RF 56 (7): 29–80. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=asx&AN=124191610&authtype=sso&custid=ns315887.