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Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers.
- Source :
-
IEEE Transactions on Nuclear Science . Jan2017, Vol. 64 Issue 1, part 1, p263-268. 6p. - Publication Year :
- 2017
-
Abstract
- We evaluate the response of T-shaped, asymmetric, piezoresistive, micromachined cantilevers fabricated on p-type Si to 10-keV X-ray irradiation. The resonant frequency decreases by 25 ppm at 2.1 Mrad(SiO2), and partially recovers during post-irradiation annealing. An explanation of the results is proposed that is based on radiation-induced acceptor depassivation. This occurs because radiation-generated holes release hydrogen from previously passivated acceptors, causing the carrier concentration to increase, especially near the surface. Increased carrier concentration decreases Young’s modulus, resulting in a decrease in the cantilever resonant frequency. Finite element simulations show that the effect of a decreasing Young’s modulus in the surface region is consistent with the measured decrease in resonant frequency in the irradiated devices. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 64
- Issue :
- 1, part 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 121745568
- Full Text :
- https://doi.org/10.1109/TNS.2016.2631458