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Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche Conditions.

Authors :
Sinha, Dheeraj Kumar
Chatterjee, Amitabh
Schrimpf, Ronald D.
Source :
IEEE Transactions on Electron Devices. Aug2016, Vol. 63 Issue 8, p3185-3192. 8p.
Publication Year :
2016

Abstract

This paper models the indeterminacy that occurs during the formation of breakdown current channels in a bipolar structure, when subjected to an ultrafast high voltage pulse. The experimental results, pertaining to different regimes of the voltage ramp speed, applied across the bipolar structure are modeled. The avalanche injection mechanisms under variable high speed ramps are studied through the formation and propagation of ionizing waves, which lead to either weak or strong injection of mobile carriers, as the high current injection paths get coupled. Furthermore, the role of emitter injection is related to the indeterminacy associated with the snapback phenomenon and systematically related to the experimental observations. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189383
Volume :
63
Issue :
8
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
117001895
Full Text :
https://doi.org/10.1109/TED.2016.2584102