Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550°C. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0×1018 to 5.8×1018 cm−3; and the lattice mismatch of InGaAs to InP was observed to vary from −5.70×10−4 to 1.49×10−3. In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2×1018 to 1.3×1019 cm−3. The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. [Copyright &y& Elsevier]