Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

MLA

Jiang, L., et al. “Effects of V/III Ratio on InGaAs and InP Grown at Low Temperature by LP-MOCVD.” Journal of Crystal Growth, vol. 260, no. 1/2, Jan. 2004, p. 23. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2003.08.013.

APA

Jiang, L., Lin, T., Wei, X., Wang, G. H., Zhang, G. Z., Zhang, H. B., & Ma, X. Y. (2004). Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD. Journal of Crystal Growth, 260(1/2), 23. https://doi.org/10.1016/j.jcrysgro.2003.08.013

Chicago

Jiang, L., T. Lin, X. Wei, G.H. Wang, G.Z. Zhang, H.B. Zhang, and X.Y. Ma. 2004. “Effects of V/III Ratio on InGaAs and InP Grown at Low Temperature by LP-MOCVD.” Journal of Crystal Growth 260 (1/2): 23. doi:10.1016/j.jcrysgro.2003.08.013.