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Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction.
- Source :
-
Journal of Luminescence . May2016, Vol. 173, p1-4. 4p. - Publication Year :
- 2016
-
Abstract
- We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 2.0 V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565 nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222313
- Volume :
- 173
- Database :
- Academic Search Index
- Journal :
- Journal of Luminescence
- Publication Type :
- Academic Journal
- Accession number :
- 113403936
- Full Text :
- https://doi.org/10.1016/j.jlumin.2015.12.048