Cite
Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction.
MLA
Zhao, Yang, et al. “Near Infrared Light-Emitting Diodes Based on n-InN/p-NiO/p-Si Heterojunction.” Journal of Luminescence, vol. 173, May 2016, pp. 1–4. EBSCOhost, https://doi.org/10.1016/j.jlumin.2015.12.048.
APA
Zhao, Y., Wang, H., Wu, G., Jing, Q., Yang, H., Gao, F., Li, W., Zhang, B., & Du, G. (2016). Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction. Journal of Luminescence, 173, 1–4. https://doi.org/10.1016/j.jlumin.2015.12.048
Chicago
Zhao, Yang, Hui Wang, Guoguang Wu, Qiang Jing, Hang Yang, Fubin Gao, Wancheng Li, Baolin Zhang, and Guotong Du. 2016. “Near Infrared Light-Emitting Diodes Based on n-InN/p-NiO/p-Si Heterojunction.” Journal of Luminescence 173 (May): 1–4. doi:10.1016/j.jlumin.2015.12.048.