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Atomic-scale characterization of Si(110)/6H-SiC(0001) heterostructure by HRTEM.
- Source :
-
Materials Letters . Jan2016, Vol. 163, p47-50. 4p. - Publication Year :
- 2016
-
Abstract
- The atomic structure of Si(110)/SiC(0001) heterojunctions prepared on 6H-SiC(0001) was characterized by transmission electron microscopy and X-ray diffraction. An FCC-on-HCP parallel epitaxy is achieved for the Si(110)/SiC(0001) heterostructure with a growth temperature of 1050 °C and the in-plane orientation relationship is Si[1-10]//6H-SiC[11-20]. The pure edge misfit dislocations with a Burgers vector of 1 3 <11-20> SiC parallel to the interface are observed to accommodate the extreme lattice mismatch. Along the in-plane orientation Si[1-10]SiC[11-20], the Si/6H-SiC interface has a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%. The misfit dislocation density at the Si/SiC interface is calculated as 1.217×10 14 cm −2 . [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 163
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 110957886
- Full Text :
- https://doi.org/10.1016/j.matlet.2015.10.017