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The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx.
- Source :
-
Current Applied Physics . May2015, Vol. 15 Issue 5, p648-653. 6p. - Publication Year :
- 2015
-
Abstract
- In this investigation, the carrier concentration gradient between channel and contact region is achieved to improve the Thin film Transistors (TFT) performance by employing annealing at 350 °C in forming gas (N 2 + 5% H 2 ). The contact region is covered with Mo metal and the channel region is only exposed to forming gas to facilitate the diffusion controlled reaction. The TFT using a-IGZO active layer is fabricated in ambient of Ar:O 2 in ratio 60:40 and the conductivity of the order of 10 −3 S/cm is measured for as-deposited sample. The electrical conductivity of an annealed sample is of the order of 10 2 S/cm. The device performance is determined by measuring merit factors of TFT. The saturation mobility of magnitude 18.5 cm 2 V −1 s −1 has been determined for W/L (20/10) device at 15 V drain bias. The extrapolated field effect mobility for a device with channel width (W) 10 μm is 19.3 cm 2 V −1 s −1 . The on/off current ratio is 10 9 and threshold voltage is in the range between 2 and 3 V. The role of annealing on the electronic property of a-IGZO is carried out using X-ray photoelectron spectroscopy (XPS). The valance band cut-off has been approximately shifted to higher binding energy by 1 eV relative to as-deposited sample. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15671739
- Volume :
- 15
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Current Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 101926784
- Full Text :
- https://doi.org/10.1016/j.cap.2015.02.017