Cite
The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx.
MLA
Kamal, Raj, et al. “The Effect of Annealing in Forming Gas on the A-IGZO Thin Film Transistor Performance and Valence Band Cut-off of IGZO on SiNx.” Current Applied Physics, vol. 15, no. 5, May 2015, pp. 648–53. EBSCOhost, https://doi.org/10.1016/j.cap.2015.02.017.
APA
Kamal, R., Chandravanshi, P., Choi, D.-K., & Bobade, S. M. (2015). The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx. Current Applied Physics, 15(5), 648–653. https://doi.org/10.1016/j.cap.2015.02.017
Chicago
Kamal, Raj, Piyush Chandravanshi, Duck-Kyun Choi, and Santosh M. Bobade. 2015. “The Effect of Annealing in Forming Gas on the A-IGZO Thin Film Transistor Performance and Valence Band Cut-off of IGZO on SiNx.” Current Applied Physics 15 (5): 648–53. doi:10.1016/j.cap.2015.02.017.