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Depending on the detailed geometry, gate voltage, and circuitry, nanoscale Si/SiGe cross junctions at low temperatures exhibit full-wave rectification arising from different mechanisms like change in the number of current-carrying modes, stationary ballistic charging of a current-free voltage lead, and hot-electron thermopower. We study the rectifier structures on high-mobility Si/SiGe heterostructures consisting of a straight voltage stem and oblique current-injecting leads. Local gate electrodes are used to control the electron density in the voltage or current channel. Compared to three-terminal Y-branch junctions, the four-terminal cross junction eliminates the mode effect. A gradual increase of output voltage as gate-voltage is reduced until threshold voltage is identified as contribution of hot-electron thermopower. Heating the initially cold reservoir from a second orthogonal cross junction eliminates the electron temperature gradient and suppresses the thermopower. Even if the operation as six-terminal device re-induces a mode-controlled contribution, we demonstrate that it is negligible. As expected, the ballistic signal can be reliably separated from other mechanisms by measurements under positive gate voltage. The ballistic voltage can be described by a parabolic function of the injected current and is proportional to the cosine of the injection angle. [ABSTRACT FROM AUTHOR]

Quantum point contacts (QPCs) are fabricated on modulation-doped Si/SiGe heterostructures and ballistic transport is studied at low temperatures. We observe quantized conductance with subband separations up to 4 meV and anomalies in the first conductance plateau at 4e2/h. At a temperature of T=22 mK in the linear transport regime, a weak anomalous kink structure arises close to 0.5(4e2/h), which develops into a distinct plateau-like structure as temperature is raised up to T=4K. Under magnetic field parallel to the wire up to B=14 T, the anomaly evolves into the Zeeman spin-split level at 0.5(4e2/h), resembling the "0.7 anomaly" in GaAs/AlGaAs QPCs. Additionally, a zero-bias anomaly (ZBA) is observed in nonlinear transport spectroscopy. At T=22 mK, a parallel magnetic field splits the ZBA peak up into two peaks. At B=0, elevated temperatures lead to similar splitting, which differs from the behavior of ZBAs in GaAs/AlGaAs QPCs. Under finite dc bias, the differential resistance exhibits additional plateaus approximately at 0.8(4e2/h) and 0.2(4e2 /h) known as "0.85 anomaly" and "0.25 anomaly" in GaAs/AlGaAs QPCs. Unlike the first regular plateau at 4e2/h, the 0.2(4e2 /h) plateau is insensitive to dc bias voltage up to at least VDS=80 mV, in-plane magnetic fields up to B=15 T, and to elevated temperatures up to T=25 K. We interpret this effect as due to pinching off one of the reservoirs close to the QPC. We do not see any indication of lifting of the valley degeneracy in our samples. [ABSTRACT FROM AUTHOR]