Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions.

Depending on the detailed geometry, gate voltage, and circuitry, nanoscale Si/SiGe cross junctions at low temperatures exhibit full-wave rectification arising from different mechanisms like change in the number of current-carrying modes, stationary ballistic charging of a current-free voltage lead, and hot-electron thermopower. We study the rectifier structures on high-mobility Si/SiGe heterostructures consisting of a straight voltage stem and oblique current-injecting leads. Local gate electrodes are used to control the electron density in the voltage or current channel. Compared to three-terminal Y-branch junctions, the four-terminal cross junction eliminates the mode effect. A gradual increase of output voltage as gate-voltage is reduced until threshold voltage is identified as contribution of hot-electron thermopower. Heating the initially cold reservoir from a second orthogonal cross junction eliminates the electron temperature gradient and suppresses the thermopower. Even if the operation as six-terminal device re-induces a mode-controlled contribution, we demonstrate that it is negligible. As expected, the ballistic signal can be reliably separated from other mechanisms by measurements under positive gate voltage. The ballistic voltage can be described by a parabolic function of the injected current and is proportional to the cosine of the injection angle. [ABSTRACT FROM AUTHOR]