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In this study, the effect of annealing on the structural, surface morphology and chemical structure of titanium suboxide (TiO2‐x) thin films has been investigated. TiO2‐x films had been grown on Si substrates by DC‐magnetron sputtering with different sputter powers (75 and 100 W) at room temperature (RT) and 200°C substrate temperature (ST). The films were subsequently annealed for 1 h at 300, 400 and 500°C in vacuum. The impact of ST, post‐annealing and sputter power on crystallinity, surface morphology and chemical state of the films were studied. Grazing incidence X‐ray diffraction (GIXRD) data revealed that the films were amorphous or exhibited a very low crystalline structure while deposited at RT and even after annealing. Moreover, the films showed crystallinity while deposited at ST and exhibited an anatase‐rutile (A‐R) mix phase from anatase (A) annealed at 300°C (75 W at ST). X‐ray reflectivity (XRR) data showed that the mass density of the films increased with the annealing temperature. Images obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) revealed that post‐annealing increased the surface roughness of the films. X‐ray photoelectron spectroscopy (XPS) analysis indicated the films were sub stoichiometric. It was also indicated that Ti was in the form of Ti4+ and Ti3+ states in all films, and the proportion of Ti4+ slightly increased after post‐annealing at 500°C. The findings showed that post‐annealing, ST and sputtering power can all affect the growth of TiO2‐x films. [ABSTRACT FROM AUTHOR]

The influence of a number of physical factors on the structural and hysteresis properties of multilayer films (Cr–Mn)/FeNi was studied. According to indirect signs, the presence of antiferromagnetism in Cr–Mn layers with a Mn content of 20–40 at % has been established. It is shown that the exchange-bias effect in such structures can be observed only when the thickness of the antiferromagnetic layer exceeds 40 nm. The initial reason for the low "fixing" properties of the Cr–Mn layer is its weak magnetic anisotropy, which is superimposed by instability in the microstructure reproduction. The use of substrate heating during deposition of films increased the reproducibility of the microstructure parameters and the hysteresis characteristics, but led to weakening of the exchange-bias effect apparently due to changes in the structure and composition of the interlayer interface. [ABSTRACT FROM AUTHOR]

Zr-Si-N thin films were co-deposited by reactive magnetron sputtering to verify the influence of silicon content (1.6 and 8.0 at. % Si) and substrate temperature (room temperature and heated to 973 K) on structure, morphology, chemical bonds and hardness. GAXRD shows a change in grain orientation from (111) to (200) due substrate heating for sample Zr0.984Si0.016N, furthermore, it was not possible to identify any silicon compounds in all deposited samples. SEM-FEG images show greater roughness and surface clusters for sample Zr0.920Si0.080N due to the heat applied on the substrate, with Si3N4 decomposition, influencing thin film hardness. XPS analyses of Si 2p photoelectronic region shows only Si3N4 presence in all samples, proving, in conjunction with other characterization results, the non-formation of substitutional or interstitial solid solution, regardless of substrate heating or silicon content added to ZrN matrix.

In cold spraying, formation and adhesion of the coating is mainly due to the kinetic impact of the powders as they impinge on the substrate, at velocities above the critical value, causing substantial plastic deformation of both the particles and substrate. Most of the research around cold spraying focuses on preheating the gas before spraying; however, this article is aimed at preheating the substrate only and evaluating its effect on the microstructure of the coating. Before deposition the substrate was preheated at different temperatures to understand its effect on the corrosion behavior. The analysis shows that the powder particle could efficiently deposit, by increasing the substrate temperature up to at least 250 °C. The corrosion current density extracted from the Tafel plot shows a decreasing trend than bare 1020 steel in 3.5 wt.% NaCl solution. However, at higher temperatures the corrosion behavior detriments due to an increase in the oxygen content of the coating during deposition. An estimation of the gas velocity shows that substrate heating is beneficial in obtaining high deposition efficiencies even with low gas velocities, much below the theoretical critical velocity for nickel. [ABSTRACT FROM AUTHOR]

Various nano‐aluminum thermites were printed and burned on substrates. The reactions were recorded using high‐speed and infra‐red videography in order to investigate the factors affecting the resulting substrate heating. A large number of factors are found to affect the achieved substrate temperature. The thermite's exothermic energy release, gas generation, and burn rate are significant factors, as are the substrate's mass and thermal conductivity. Full‐thickness heating to 360 °C is demonstrated for a standard glass microscope slide. This work will hopefully inspire new applications in actuators or on‐chip thermal processing utilizing the high energy density of printed thermites. [ABSTRACT FROM AUTHOR]

Abstract Ti10Fe5Si5Cr3Nb composite coatings were fabricated using laser cladding technique. Laser power was varied from 800W to 1200W while the scanning speed was kept constant at 1.5 m/min. The microstructural analysis of the samples was conducted by using optical microscope, X-ray diffractometer and scanning electron microscope coupled with energy dispersive spectroscopy. Potentiodynamic polarization and diamond indenter were used to study the corrosion and microhardness properties of the alloy. The alloy exhibited a dendritic microstructure with Si-rich dispersed phase. Grain coarsening was observed to be dependent on coating depth. The microhardness was high at the top and decreased with coating depth. No improvement in corrosion resistance was noticed but the presence of Cr in the alloy promoted passivation.

Phosphate coatings have been produced by plasma-spraying hydroxyapatite (HA) and tricalcium phosphate (TCP) powders onto Ti substrates at initial temperatures of 20, 300, and 550°C, followed by hydrothermal treatment (HTT) at 650°C, and the variation in the phase composition of the coatings has been examined in relation to the phase composition of the plasma-sprayed powders: 100 wt % HA, 100 wt % α‑TCP, and 100 wt % β-TCP. The as-prepared coatings produced by plasma-spraying the HA powder consisted of 87–91 wt % HA and 9–13 wt % CaO, and after HTT their phase composition was 89–93 wt % HA and 7–11 wt % CaO. The coatings produced by plasma-spraying the α-TCP powder at initial substrate temperatures from 20 to 550°C consisted entirely of a crystalline α-TCP phase. The coatings produced by plasma-spraying the β-TCP powder consisted of both β-TCP and α-TCP, and the content of the latter phase decreased from 100 to 80% as the substrate temperature was raised from 20 to 550°C. After HTT, the coatings contained 26–28% HA, independent of the phase composition of the starting TCP powders. [ABSTRACT FROM AUTHOR]

Optimization of the physical properties of ZnO thin films doped with different elements opens new opportunities for the application of these materials in different fields. Consequently, it is crucial to thoroughly explore the correlation of their structural, mechanical, and optical properties. In this paper, pure and Ag–Mn co-doped ZnO thin films were deposited by rapid thermal evaporation (RTE) method on glass substrates with the same Ag (5%)-Mn (5%) content at different substrate temperatures (room temperature, 200 °C and 400 °C). Subsequently, the samples were then annealed at 400 °C for 1 h. The prepared thin films were characterized by many techniques including XRD, XPS, SEM, EDS, Nanoindentation and UV–Vis–NIR spectroscopy. XRD analysis showed that the annealed layers have hexagonal wurtzite structure and the crystallinity rises as the substrate temperature increases. The elemental analysis of the films investigated by XPS and EDS which revealed the presence of C, Zn, Ag, Mn and O atoms for all layers. The morphological aspect performed by SEM revealed the apparition of nanoparticles of silver and ZnO. Nanoindentation measurements showed that the hardness increases from 9.43 to 12.44 GPa. The optical transmission of the films decreases with doping and with substrate heating, reaching 70–81 %. These variations are due to the structural and morphological changes related to the effect of co-doping and substrate heating. [Display omitted] • Effect of co-doping and substrate temperature on the physical properties of ZnO thin films. • All ZnO layers crystallize in hexagonal wurtzite phase and the substrate heating improve the crystallinity. • XPS analysis show the presence of the different element and demonstrates the oxidation state of ZnO. • The linear/non-linear optical parameters were identified only from the transmittance spectra using ABC algorithm. • Both co-doping and substrate temperature increase lead to an increase film's hardness. [ABSTRACT FROM AUTHOR]

We developed a lead (II) phthalocyanine (PbPc)-based inverted organic photodetector (OPD) detecting near-infrared (NIR) wavelength near 940 nm. Such inverted OPDs can be combined with n-channel silicon-based integrated circuits. Operation near 940 nm is crucial in terms of daylight applications because the intensity of sunlight is low near that wavelength. A spectral response to 1000 nm was achieved by depositing PbPc on a heated C 60 layer to form a triclinic rather than a monoclinic phase. This exhibited a much higher responsivity (35.8 mA/W at 960 nm) compared to a device fabricated without substrate heating (8.4 mA/W). The external quantum efficiency also increased from 0.9 to 4.4%. [ABSTRACT FROM AUTHOR]

The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ± 5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process. [ABSTRACT FROM AUTHOR]

Importance of substrate heating for fabrication of strong zirconium targets ( 92 Zr) has been discussed. The targets have been prepared using experimental facilities of target laboratory at Inter University Accelerator Centre (IUAC), New Delhi, India. Substrate heating has been tried for the first time for the fabrication of carbon backed zirconium targets. The heating of substrate exhibited improved stability, longevity and a better success rate of production of targets. In addition, a large number of wrinkle-free targets have been obtained using this technique. Elemental analysis has been performed to determine purity of the targets with X-ray fluorescence and Rutherford back-scattering spectrometry methods. These targets have successfully survived against high flux heavy ion bombardment viz. 14 N and 28 Si. [ABSTRACT FROM AUTHOR]

In this study the Ti-based alloy Ti-5Al-5V-5Mo-3Cr (wt%) was processed using selective laser melting (SLM) while keeping the substrate plate at a constant temperature of 500 °C. Cubic samples were successfully fabricated with a relative density of about 99%. Their microstructures were analysed and correlated with the mechanical properties and compared with the fabrication state of non-heated selective laser melted Ti-5553. Investigations by XRD, SEM and TEM revealed the formation of a microstructure composed of a β-phase matrix and finely dispersed α-phase plates when heating was conducted. The microstructure critically depends on the thermal history and was found to have a pronounced influence on the mechanical behaviour. The mechanical properties of the heated specimens showed an enhanced compressive strength of about 1600 MPa while the deformability remained relatively high. These results demonstrate that selective laser melting is capable of creating bulk parts with improved mechanical by precipitation hardening realized by applying an additional substrate heating during the process. [ABSTRACT FROM AUTHOR]

Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density. [ABSTRACT FROM AUTHOR]

Cu 2 ZnSn(SSe) 4 (CZTSSe) thin films were successfully deposited on TiN/Mo-coated glass substrate using RF-sputtering from single ceramic CZTSSe target, followed by annealing at 400–600 °C for 1 h in Se atmosphere. The influence of substrate heating (RT−300 °C) and post-selenization on the morphological, structural, and compositional properties of the films were investigated using X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy, as well as by Raman scattering and X-ray photoelectron spectroscopy. The crystallinity with preferential (1 1 2) orientation of the as-sputtered precursor films increased with increasing the substrate temperature and the selenization temperature. Compared with the thin films as deposited, post-selenization (400–600 °C) further improved the microstructure features and elemental compositions. The thin films selenized at 600 °C got dense microstructure and large grain size of 2 μm, nearly stoichiometric Cu-poor and Zn-rich compositions with Cu/(Zn + Sn + Sb) ∼0.78 and Zn/Sn ∼1.24, and tetragonal structure with lattice parameters a = 5.663 Å, c = 11.234 Å. This study provides an insight into the use of single ceramic CZTSSe target sputtering method to demonstrate the selenization conditions, such as substrate temperature and selenium partial pressure, for improving the film crystallinity, stoichiometry and grain growth. [ABSTRACT FROM AUTHOR]

We investigated the effect of substrate heating on nanocomposite (nc) ZnO–SiO x thin films grown by rf co-sputter deposition. Results show that structural and optical properties depend strongly on the substrate temperature. With increase of substrate temperature, ZnO nanocrystals grow with better UV absorption, lower defects, better crystalline quality and migrate from surface to subsurface regions of the film, but the content and crystalline quality of Zn 2 SiO 4 phase increases. For the substrate temperature of 750 °C, ZnO quantum dots with band gap of 3.48 eV are embedded in a higher band gap (5.08 eV) rhombohedral Zn 2 SiO 4 containing silica. The results show that substrate temperature can be used to control the content and crystalline quality of ZnO and Zn x SiO y phases in the films and hence tune them for different applications. [ABSTRACT FROM AUTHOR]

Abstract: The aims of this study are to fabricate the Zr–Cu–Ni–Al thin film metallic glass (TFMG) on silicon substrates by DC magnetron sputtering with single target and to investigate the characteristics of coatings with various substrate temperatures. All the coatings exhibit similar structural and thermal properties, yet the hardness increases with processing temperature. It is demonstrated that amorphous matrix and cluster structure are slightly affected by the processing temperatures due to high cooling rate during deposition and superior glass-forming ability. Besides, atoms and clusters can acquire extra energy via heating substrate to stabilize each cluster, and the amount of free volume is reduced. Thus, the hardness increases with substrate temperature owing to the resistance to the shear band propagation. In summary, this study integrates the correlations among microstructure, thermal and mechanical properties, providing a convenient approach to tune TFMG coating performance. [Copyright &y& Elsevier]

[Display omitted] • Highly crystalline In 2 O 3 films are grown by pulsed reactive magnetron sputtering. • Substrate heating further improves the film crystallinity and conductivity. • 400 °C is the limit for benefiting to obtain the optimum crystallinity of In 2 O 3 films. • The films deposited at 400 °C yield the lowest resistivity of 1.28 × 10-4 Ω⋅cm. • An average transmittance of greater than 80% are also obtained at 400 °C. A transparent conductive oxide (TCO) should have a combination of high electrical conductivity and optical transmission property to fulfill the challenging demands of industrial applications. So far, doped TCOs have been mostly considered to fulfill the technological challenges. In this study, we demonstrate that indium oxide (In 2 O 3) thin films without intentional doping can be deposited with high crystallinity under specific film growth conditions leading to thin films with high mobility, high electrical conductivity, and high transmittance. In 2 O 3 thin films have been deposited by reactive pulsed direct current magnetron sputtering (pulsed DCMS) from an indium target on substrates in a temperature range from room temperature (RT) to 600 °C. Detailed investigations on In 2 O 3 thin films are performed and the film properties such as crystallinity, microstructure, chemical bonding states, electrical and optical properties are revealed. Enhanced plasma density and ionization degree provided by the employed reactive pulsed DCMS and the intentional substrate heating during the thin film deposition give possibility to deposit highly crystalline thin films which are preferentially oriented in (2 2 2) direction. The substrate heating enhances the crystallinity of the grown films up to a certain optimum temperature: 400 °C. When the substrate temperature is above 400 °C, the carrier concentration and mobility decrease due to the grain refinement effect caused by growth competition of grains in different orientations. The films grown at 400 °C indicate the presence of high oxygen vacancy concentrations, which can directly be associated with a high charge carrier concentration despite the lack of intentional doping. The undoped In 2 O 3 films in this study grown at 400 °C show highly promising and competitive electrical properties such as low resistivity of 1.28 × 10-4 Ω⋅cm and the high carrier mobility of 69 cm2/Vs. The average transmittance of the In 2 O 3 films with the highest conductivity is found to be greater than 80% in the visible to the near-infrared spectral region owing to an enhancement in the carrier mobility and an optical bandgap in the range from 3.61 eV to 3.77 eV. [ABSTRACT FROM AUTHOR]

Abstract: Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp3 /(sp2 +sp3) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40W of RF power and 673K of substrate temperature. The maximum adhesion strength of 14.8MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished #150 at 40W of RF power and 673K of substrate temperature. [Copyright &y& Elsevier]

We report that the S-shaped kink of current density-voltage (J-V) characteristics, which reduce fill factor of organic photovoltaic cells, can be removed by substrate heating during donor layer deposition process. Subphthalocyanine (SubPc) donor film in combination with buckminsterfullerene (C60) acceptor film has been studied in a planar bilayer donor/acceptor heterojunction by J-V characterization under AM 1.5 simulated illuminations with various thicknesses of SubPc donor film. The substrate heating process enhances hole mobility of SubPc film, resulting 8.7% of efficiency enhancement with markedly improvement of S-shaped kink in J-V curves. [ABSTRACT FROM PUBLISHER]

Abstract: Planar heterojunction organic solar cells using wide bandgap phosphorescent material bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2''] iridium (acetylacetonate) [(t-bt)2Ir(acac)] as electron donor and fullerene (C60) as electron acceptor were fabricated. A large open circuit voltage of 0.94V was achieved due to low highest occupied molecular orbital level of (t-bt)2Ir(acac). The effect of different hole transport layers and substrate heating were investigated to improve fill factor. It is shown that the open circuit voltage is strongly influenced by the interface energy barrier, whereas the fill factor is mainly limited by the charge carrier transport properties in active materials. The fill factor was significantly improved by either using hole transport layer with high carrier mobility or increasing the hole mobility of (t-bt)2Ir(acac). A power conversion efficiency of 2.10% under AM 1.5 solar illumination at an intensity of 100mW/cm2 was achieved by heating the substrate during the deposition of active materials. [Copyright &y& Elsevier]

Abstract: We present a comprehensive investigation of morphological changes inside the active layer of an organic solar cell induced by substrate heating during layer deposition by thermal evaporation in ultra-high vacuum. To explore the trends observed in solar cell devices, we apply absorption and photoluminescence spectroscopy, atomic force microscopy, X-ray diffraction, and organic field effect transistor measurements. The material combination we use comprises unsubstituted dicyanovinyl end-capped quaterthiophene (DCV4T) as the donor material mixed with as the acceptor. The solar cell power conversion efficiency decreases with increasing substrate temperature during film deposition due to changes in the crystalline structure of the oligothiophene phase, leading to a decrease in absorption strength. Photoluminescence measurements show that substrate heating increases the amount of phase separation between the donor and acceptor, and topology and structure investigations reveal large aggregates of polycrystalline DCV4T at the surface. However, the fill factor is increased for higher substrate temperatures due to better transport properties. The highest efficiency obtained with this material combination and stack design is 3.0% under AM1.5g illumination. [Copyright &y& Elsevier]

Abstract: Organic solar cells were fabricated by spray deposition of highly conductive PEDOT:PSS. Both PEDOT:PSS (Clevios PH750) and an active layer were spray deposited by the substrate heating method. In order to improve the conductivity of spray-deposited PEDOT:PSS, DMF or DMSO was added to it. As a result, surface morphology of PEDOT:PSS with DMSO-(/DMF) changed and its conductivity improved by about 10,000 times that of pure PEDOT:PSS. Solar cells fabricated using spray-deposited DMSO-added PEDOT:PSS as a transport layer showed a power conversion efficiency (PCE) of ∼3%, an open voltage of 0.62V, and a short circuit current of 14.02mA/cm2. [Copyright &y& Elsevier]

Abstract: Columnar-structured rutile TiO2 film with a thickness of 1.4μm is prepared using the radio-frequency (RF) magnetron sputtering technique, for application in dye-sensitized solar cells (DSSCs). Pure rutile TiO2 films are fabricated by controlling the substrate temperature during sputtering and using a substrate with a rough surface morphology. Successive substrate heating to 623K induces the growth of a rutile TiO2 film that has a specific direction in the (110) plane, which results in a decrease in the average grain size. This causes in an increase of dye uptake and thereby contributes to enhancement of the photocurrent in the DSSC. [Copyright &y& Elsevier]

Substrate heating in greenhouses shows important benefits for crop development. Yet, the high energy costs of these systems demand the application of energy-saving strategies, which requires an appropriate dimensioning of the system that allows for prediction of substrate temperature distribution and energy performance. In this study, we analyze the effect of heating cable spacing on these two factors. To perform the analysis, we simulated the operation of an electric cable heating system during one day. The heating cable was buried in a sand substrate at 225 mm depth and at spacings of l00, 150, 200, 250, 300, and 350 mm. The simulation was carried out by using a model developed with a general-purpose finite element code that enabled the study of the thermal behavior of different geometries in a two-dimensional space and in a transient state. The results of the model revealed a rather homogeneous substrate temperature distribution for heating cable spacings of up to 250 ram. In addition, the percentage of the heat flow supplied that reached the root zone was similar for all the configurations studied, with values of 66% to 67%, which suggests that the use of the heat supplied was very similar in all configurations. Moreover, energy consumption decreased with the increase in spacing between cables. However, the temperatures required under the boundary conditions applied in the analysis were not achieved for spacings larger than 300 mm. [ABSTRACT FROM AUTHOR]

Abstract: The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment. [Copyright &y& Elsevier]

Targets of isotopically enriched Er (erbium) were prepared on 45 μg/cm carbon backing using the method of vacuum evaporation. Another layer of carbon with thickness 23 μg/cm was deposited on it as a protective cap with the help of an electron gun. Carbon backing, Er and the capping carbon layer were deposited using resistive heating and electron gun deposition without disturbing the vacuum. The thickness of Er was measured by X-ray fluorescence analysis as well as with Rutherford backscattering spectrometry and it was found to be 150 μg/cm. Successful preparation of sandwiched targets was very sensitive to substrate temperature, deposition rate, duration of in situ annealing, cooling rate etc. [ABSTRACT FROM AUTHOR]

Substrate heating is the most common method for controlling crystallization during spray coating. However, due to poor controllability during substrate heating, the sprayed films have variable thicknesses and rich pores, which limit the efficiency of the device. Here, hot air blowing was applied to spray coating to promote the crystallization of perovskite films under ambient conditions. Upon employing a hot air blowing method that stimulated uniformly distributed nuclei growth, the pinhole-free and thickness-controllable perovskite film was prepared. This enabled more reproducible high-quality perovskite films to achieve a power conversion efficiency of 13.5% and obtain a stabilized power output of >12% in ambient conditions.

Inverted near-infrared (NIR) organic photodetectors (OPDs) are required to combine the OPDs with an n-channel silicon-based integrated circuit. NIR absorption in the 930-960 nm range is important because the intensity of solar irradiation is low in this wavelength regime. Here, we controlled the crystallinity of lead(II) phthalocyanine (PbPc) in a PbPc:C 60 blend film to obtain NIR absorption. To form a triclinic phase responsible for NIR light absorption, a substrate was heated during fabrication and C 60 was used as a templating layer, as well as an electron extraction layer, for an inverted structure. NIR absorption near 950 nm was enhanced, and the structural properties of the film changed dramatically. The OPD with enhanced NIR absorption exhibited a responsivity of 244 mA/W and an external quantum efficiency of 31.1% at a reverse bias of -3 V and 970 nm. The OPD detectivity also increased to 9.01 × 10 12 and 1.36 × 10 11 cm Hz 1/2 /W under a zero bias and a reverse bias of -3 V, respectively.