Back to Search
Start Over
Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target.
- Source :
-
Applied Physics A: Materials Science & Processing . Jan2018, Vol. 124 Issue 1, p1-1. 5p. - Publication Year :
- 2018
-
Abstract
- The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ± 5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ARGON
*MAGNETRON sputtering
*THERMOCOUPLES
*SPUTTERING (Physics)
*POLYNOMIALS
Subjects
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 124
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 127377504
- Full Text :
- https://doi.org/10.1007/s00339-017-1458-4