719 results on '"solar-cells"'
Search Results
2. Direct experimental evidence for photoinduced strong-coupling polarons in organolead halide perovskite nanoparticles
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Canton, Sophie [Univ. of Hamburg, Hamburg (Germany)]
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- 2016
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3. Photo-induced halide redistribution in organic–inorganic perovskite films
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Stranks, Samuel [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Research Laboratory of Electronics; Cavendish Laboratory, Cambridge (United Kingdom)]
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- 2016
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4. Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals
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Duan, Xiangfeng [Univ. of California, Los Angeles, CA (United States). Dept. of Chemistry and Biochemistry, CA Nanosystems Inst.]
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- 2016
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5. Synthesis, Applications, and Prospects of Quantum‐Dot‐in‐Perovskite Solids.
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Chen, Haijie, Pina, Joao M., Hou, Yi, and Sargent, Edward H.
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SEMICONDUCTOR nanocrystals , *CHARGE carrier lifetime , *PEROVSKITE , *LIGHT emitting diodes , *QUANTUM dots , *SOLAR cells , *SOLIDS - Abstract
Quantum‐dot‐in‐perovskite solids (QDiP), wherein colloidal quantum dots (CQDs) are inside bulk hybrid halide perovskites, have emerged as a novel class of semiconductors with mixed dimensionalities. The interfacial quality achieved enables good charge transport from the perovskite matrix to the embedded dots and leads to photon interaction functionalities that go beyond those of the single‐phase constituents. In this review, recent advances in the synthesis and compositions of QDiP are showcased, the improved optoelectronic properties are discussed, and their applications are explored. The authors focus on how the combination of CQDs and halide perovskites enhances stability, charge transport, and carrier diffusion length. Progress in device operation (prominently, light‐emitting diodes and solar cells) is summarized, and a perspective on future opportunities for QDiPs is given. [ABSTRACT FROM AUTHOR]
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- 2022
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6. Gas expanded polymer process to anneal nanoparticle dispersion in thin films
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Michael Kilbey, S. [Univ. of Tennessee, Knoxville, TN (United States)]
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- 2015
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7. Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage
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Chen Chen, Yanmeng Chu, Linjun Zhang, Haojun Lin, Wenzhang Fang, Zheyu Zhang, Chaofei Zha, Kejia Wang, Hui Yang, Xuezhe Yu, James A. Gott, Martin Aagesen, Zhiyuan Cheng, Suguo Huo, Huiyun Liu, Ana M. Sanchez, and Yunyan Zhang
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MECHANISM ,DYNAMICS ,SIOX ,SOLAR-CELLS ,DESIGN ,PHASE ,General Materials Science ,Physical and Theoretical Chemistry ,SILICON ,V SEMICONDUCTOR NANOWIRES ,GAAS NANOWIRES ,ARRAYS - Abstract
For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW growth are still lacking, making it difficult to control the yield and often accompanying a high density of clusters. Here, we have performed a systematic study on this issue, which reveals that the effective V/III ratio at the initial growth stage is a critical factor that governs the NW growth yield. To initiate NW growth, the ratio should be high enough to allow the nucleation to extend to the entire contact area between the droplet and substrate, which can elevate the droplet off of the substrate, but it should not be too high in order to keep the droplet. This study also reveals that the cluster growth between NWs is also initiated from large droplets. This study provides a new angle from the growth condition to explain the cluster formation mechanism, which can guide high-yield NW growth.
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- 2023
8. Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells.
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Ghosh, S., Moreira, M.V.B., Fantini, C., and González, J.C.
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BAND gaps , *OPTICAL properties , *MOLECULAR beams , *REDSHIFT , *POINT defects , *OPTOELECTRONICS - Abstract
• Growth of Sb 2 Se 3 films on Si/SiO 2 (1 0 0) substrate using molecular beam evaporation. • The surface morphology and compositional analysis using EDS and WDS technique. • Determination of band-gaps and Urbach energies using K-M formalism and Tauc's plot. • Blue shift of Raman peaks due to the point defects caused by the loss of Se. • Red shift of band gaps with the increase of evaporation temperature. Antimony selenide (Sb 2 Se 3) is a promising material for thin-film solar-cells due to its attractive optoelectronic properties with the desirable band gap. In the present work, four different Sb 2 Se 3 films were grown on Si/SiO 2 (1 0 0) substrates at ambient temperature using ultra-high vacuum molecular beam evaporation technique and different evaporation temperatures. The compositional analysis with the help of wavelength-dispersive X-ray spectroscopy measurements demonstrate that there is a loss of Se in the as-deposited samples. However, the X-ray diffraction study indicates that the as-deposited films are nanocrystalline in nature, with average crystallite size slightly increasing with the evaporation temperature. The blue shift of Raman peaks with the increase of evaporation temperature indicates the possibility of the presence of small amount of compressive strain in the crystal lattice and it appears because of the anion vacancy (V Se) due to the loss of Se. The obtained band gap value ranges from 1.075 eV to 1.21 eV, which indicate that the as-deposited nanocrystalline Sb 2 Se 3 films are suitable for application in thin-film photovoltaic solar-cells. The tuning of the band-gap with the evaporation temperature opens a new road to optimize the device efficiency for the low-cost thin-film photovoltaics. [ABSTRACT FROM AUTHOR]
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- 2020
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9. Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, Prado Millán, Álvaro del, Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, and Prado Millán, Álvaro del
- Abstract
© 2013 The Japan Society of Applied Physics. This work has been supported by the Regional Government of Comunidad de Madrid within the project NUMANCIA II (S-2009/ENE-1477). J. Olea and D. Pastor would like to acknowledge a Juan de la Cierva fellowship from the Spanish Science Ministry (JCI-2011-10402, JCI-2011-11471). E. Antolín acknowledges a Marie Curie Fellowship from the European Commission (Project Siracusa, Grant PIEF-GA-2011-302489). The authors would like also to acknowledge the C.A.I. de Técnicas Físicas for the ion implantation experiments and Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements., In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at,photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage., Comunidad de Madrid, Spanish Science Ministry, European Commission - Project Siracusa, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
10. Experimental verification of intermediate band formation on titanium-implanted silicon
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González Díaz, Germán, García Hemme, Eric, Olea Ariza, Javier, Pastor Pastor, David, Bailón, L., Castán, H., Dueñas, S., García, H., Pérez, E., González Díaz, Germán, García Hemme, Eric, Olea Ariza, Javier, Pastor Pastor, David, Bailón, L., Castán, H., Dueñas, S., García, H., and Pérez, E.
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© American Institute of Physics. This work was partially supported by VA128A11-2 funded by the Junta de Castilla y León and the Spanish TEC2011 under Grant 27292-C02-01, CSD2006-00004 funded by the Spanish Consolider National Program and the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research of E. Pérez was supported by a University of Valladolid FPI grant and research of E. García-Hemme by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. J. Olea and D. Pastor thank Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken., Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28 eV below the conduction band for implantation doses in the range 10(13)-10(14) at./cm(2). For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n(+)/n junction., Comunidad de Madrid, Junta de Castilla y León, Spanish TEC2011, Spanish Consolider National Program, MICINN the program Juan de la Cierva, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
11. High quality Ti-implanted Si layers above the Mott limit
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, San Andres Serrano, Enrique, Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, and San Andres Serrano, Enrique
- Abstract
© 2010 American Institute of Physics. Authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, C.A.I. de Difracción de Rayos X of the Universidad Complutense de Madrid for GIXRD measurements, C.A.I. de Microscopía for TEM measurements and C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments. This work was partially supported by the Projects NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid, GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program, by the Grants (Grant No. CCG07-UCM/TIC-2804) and (Grant No. GR58/08) funded by U.C.M.-B.S.C.H., and by the Project NUMANCIA-2 (Grant No. S2009/ENE/1477) funded by the Comunidad de Madrid., In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material is to reach an impurity concentration beyond the Mott limit, which is, in this case, much higher than the solid solubility limit. To overcome this limit we used the combination of ion implantation and pulsed-laser melting as nonequilibrium techniques. Time-of-flight secondary ion mass spectrometry measurements confirm that Ti concentration exceeds the theoretical Mott limit in the implanted layer, and glancing incidence x-ray diffraction and transmission electron microscopy measurements prove that good crystallinity can be achieved. Sheet resistance and Hall effect mobility show uncommon characteristics that can only been explained assuming the IB existence., Comunidad de Madrid, Ministerio de Ciencia e Innovación (MICINN), UCM-BSCH, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
12. Interstitial Ti for intermediate band formation in Ti-supersaturated silicon
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, Mártil de la Plaza, Ignacio, González Díaz, Germán, and Olea Ariza, Javier
- Abstract
© 2012 American Institute of Physics. Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments, Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, and C.M.A.M. of the Universidad Autónoma de Madrid for RBS measurements. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. D. Pastor and J. Olea acknowledge Professor A. Luque and Professor A. Martí for the useful discussions and guidance and also acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471)., We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768274], Comunidad de Madrid, MICINN, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
13. Intermediate band mobility in heavily titanium-doped silicon layers
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, Mártil de la Plaza, Ignacio, González Díaz, Germán, and Olea Ariza, Javier
- Abstract
© 2009 Elsevier B.V. All rights reserved. This work has been supported by the project IBPOWER, funded by the European Commission under Contract no .211640, by the Regional Government of Madrid with in the project NUMANCIA (S-0505/ENE/000310) and by the Spanish National Research Program with in the project GENESIS-FV (CSD2006-0004)., The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed., European Commission, Regional Government of Madrid, Spanish National Research Program, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
14. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
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Pérez, E., Castán, H., García, H., Dueñas, S., Bailón, L., Montero Álvarez, Daniel, García-Hernansanz, R., García Hemme, Eric, Olea Ariza, Javier, González Díaz, Germán, Pérez, E., Castán, H., García, H., Dueñas, S., Bailón, L., Montero Álvarez, Daniel, García-Hernansanz, R., García Hemme, Eric, Olea Ariza, Javier, and González Díaz, Germán
- Abstract
© 2015 AIP Publishing. The study has been supported by the Spanish TEC2011 under Grant No. 27292-C02-01, TEC2013-41730-R funded by the Ministerio de Economia y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid. Research of E. Perez was supported by a University of Valladolid FPI Grant. J. Olea acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402), under which this research was undertaken. Research by E. Garcia-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM)., In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon. (C) 2015 AIP Publishing LLC., Ministerio de Economía y Competitividad (MINECO), Comunidad de Madrid, University of Valladolid, Ministerio de Ciencia e Innovación (MICINN), Moncloa Campus of International Excellence (UCM-UPM), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
15. Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, Mártil de la Plaza, Ignacio, González Díaz, Germán, and Olea Ariza, Javier
- Abstract
© 2009 American Institute of Physics. This work has been supported by the project FULL SPECTRUM (Grant No. SES6-CT-2003-502620) funded by the European Commission, by the Regional Government of Madrid within the project NUMANCIA (Grant No. S-0505/ENE/000310), and by the Spanish National Research Program within the project GENESIS-FV (Grant No. CSD2006-0004)., The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action., FULL SPECTRUM funded by the European Commission, Regional Government of Madrid, Spanish National Research Program, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
16. Meyer Neldel rule application to silicon supersaturated with transition metals
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García Hemme, Eric, García Hernansanz, Rodrigo, Olea Ariza, Javier, Pastor Pastor, David, Prado Millán, Álvaro del, Mártil de la Plaza, Ignacio, González Díaz, Germán, García Hemme, Eric, García Hernansanz, Rodrigo, Olea Ariza, Javier, Pastor Pastor, David, Prado Millán, Álvaro del, Mártil de la Plaza, Ignacio, and González Díaz, Germán
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©2015 IOP Publishing Ltd. Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations and to the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements. This work was partially supported by the Project MADRID-PV (Grant No. P2013/MAE-2780) funded by the Comunidad de Madrid and by the Spanish MINECO (Economic and Competitiviness Ministery) under grant TEC 2013-41730-R Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea thank Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI- 2011-10402 and JCI-2011-11471), under which this research was undertaken. D. Pastor acknowledges the financial support to the grant EX-2010-0662 from the Spanish Science Ministry., This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser melting. The transverse conductance is exponentially activated, obtaining values ranging from 0.018 to 0.7 eV for the activation energy and pre-exponential factors of 10^-2-10^12 S depending on the annealing energy density. A semi-logarithmic plot of the pre-exponential factor versus activation energy shows an almost perfect linear behavior as stated by the Meyer Neldel rule. The Meyer Neldel energy obtained for implantation with different transition metals and also annealed in different conditions is 22meV, which is within the range of silicon phonons, thus confirming the hypothesis of the Multi Excitation Entropy theory., Comunidad de Madrid, Ministerio de Economía y Competitividad (MINECO), España, Programa MADRID-PV, Programa Internacional de Captación de Talento (PICATA ), CEI-Moncloa, Campus de Excelencia Internacional (CEI) Moncloa, Programa Juan de la Cierva, Ministerio de Ciencia e Innovación (MICINN), España, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
17. Laser thermal annealing effects on single crystal gallium phosphide
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, Mártil de la Plaza, Ignacio, González Díaz, Germán, and Olea Ariza, Javier
- Abstract
© 2009 American Institute of Physics. The authors would like to acknowledge the CAI de Difracción de Rayos X and CAI de Microscopía of the Universidad Complutense de Madrid for GIXRD measurements and TEM measurements, respectively. This work was made possible because of the FPI program (Grant No. BES-2005-7063) and the Spanish Ministry of Education and Science under Contract No. MAT2007-63617. This work was partially supported by the Project NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid and by the Project GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program., We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding the GaP unannealed wafer. This behavior has been corroborated by GIXRD measurements. TEM images show that the LTA produces a defective layer with disoriented crystalline domains in the surface. The depth of this defective layer increases with the energy density of LTA. The lack of crystallinity after LTA processes could be related with the high bond energy value of GaP., Spanish Ministry of Education and Science - FPI program, Comunidad de Madrid, Spanish Consolider National Program, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
18. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
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Pérez, E., Dueñas, S., Castán, H., García, H., Bailón, L., Montero, Daniel, García Hernansanz, Rodrigo, García Hemme, Eric, Olea Ariza, Javier, González Díaz, Germán, Pérez, E., Dueñas, S., Castán, H., García, H., Bailón, L., Montero, Daniel, García Hernansanz, Rodrigo, García Hemme, Eric, Olea Ariza, Javier, and González Díaz, Germán
- Abstract
© 2015 AIP Publishing LLC. The study has been supported by the Spanish TEC2014 under Grant No. 52152-C3-3-R, TEC2013 41730-R funded by the Ministerio de Economía y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid. Research of E. Pérez was supported by a University of Valladolid FPI Grant. J. Olea acknowledges financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402), under which this research was undertaken. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM)., The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013 cm-2 and 1014 cm-2) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around Ec-425 and Ec-275 meV for implantation doses of 1013 cm2 and 1014 cm2, respectively. At low reverse bias voltage, quasi continuously distributed energy levels between the minimum of the conduction bands, Ec and Ec-450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known, the Meyer Neldel rule typically appears in processes involving multiple excitations, like carr, Comunidad de Madrid, Spanish TEC2014, Ministerio de Economía y Competitividad (MINECO), University of Valladolid, Ministerio de Ciencia e Innovación (MICINN), Moncloa Campus of International Excellence (UCM-UPM)., Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
19. Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
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Mártil de la Plaza, Ignacio, García Hemme, Eric, García Hernansanz, Rodrigo, González Díaz, Germán, Olea Ariza, Javier, Prado Millán, Álvaro del, Mártil de la Plaza, Ignacio, García Hemme, Eric, García Hernansanz, Rodrigo, González Díaz, Germán, Olea Ariza, Javier, and Prado Millán, Álvaro del
- Abstract
© 2012 American Institute of Physics. Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations and the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken., We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high Delta G(square), even higher than that measured in a silicon reference sample. This increase in the Delta G(square) magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition., Comunidad de Madrid, MICINN, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
20. Low temperature intermediate band metallic behavior in Ti implanted Si
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Mártil de la Plaza, Ignacio, García Hemme, Eric, García Hernansanz, Rodrigo, González Díaz, Germán, Olea Ariza, Javier, Prado Millán, Álvaro del, Mártil de la Plaza, Ignacio, García Hemme, Eric, García Hernansanz, Rodrigo, González Díaz, Germán, Olea Ariza, Javier, and Prado Millán, Álvaro del
- Abstract
© 2012 Elsevier B.V. Authors would like to acknowledge the C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments and the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements. This work was partially supported by the Projects GENESIS-FV (CSD2006-0004) funded by the Spanish Consolider National Programme, NUMANCIA II (S-2009/ENE-1477) funded by the Regional Government of Comunidad de Madrid and grant GR58/08 funded by the Universidad Complutense de Madrid., Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10(14)-10(16) cm(-2) range. Results of the sample implanted with the 10(16) cm(-2) dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices., Comunidad de Madrid, Spanish Consolider National Programme - Projects GENESIS-FV, Universidad Complutense de Madrid, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
21. Diketonylpyridinium cations as a support of new ionic liquid crystals and ion-conductive materials: analysis of counter-ion effects
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Pastor, María Jesús, Cuerva, Cristián, Campo, José A., Schmidt, Rainer, Torres, María Rosario, Cano, Mercedes, Pastor, María Jesús, Cuerva, Cristián, Campo, José A., Schmidt, Rainer, Torres, María Rosario, and Cano, Mercedes
- Abstract
© 2016 by the authors, licensee MDPI, Basel, Switzerland. Mercedes Cano thanks the Spanish Ministerio de Economía y Competitividad (project CTQ2011-25172 and CTQ2015-63858) and Complutense University (GR3/14-910300), for funding. María Jesús Pastor acknowledges the Ministerio de Economía y Competitividad for her FPI scholarship. Cristián Cuerva is grateful to the Programa de Financiación de Universidad Complutense de Madrid-Santander Universidades (Spain), for his predoctoral contract. María Jesús Pastor, Cristián Cuerva, José A. Campo and Mercedes Cano thank to Dra. Paloma Ovejero for her help with the synthesis and characterization of the compounds. Rainer Schmidt wishes to express his gratitude to Alberto Rivera-Calzada, Carlos León and Jacobo Santamaría for allowing the use and assistance with the dielectric spectroscopy., Ionic liquid crystals (ILCs) allow the combination of the high ionic conductivity of ionic liquids (ILs) with the supramolecular organization of liquid crystals (LCs). ILCs salts were obtained by the assembly of long-chained diketonylpyridinium cations of the type [HOO^(R(n)pyH)] + and BF_(4)^(-) , ReO_(4)^(-), NO_(3)^(-), CF_(3)SO_(3)^(-), CuCl_(4)^(2-) counter-ions. We have studied the thermal behavior of five series of compounds by differential scanning calorimetry (DSC) and hot stage polarized light optical microscopy (POM). All materials show thermotropic mesomorphism as well as crystalline polymorphism. X-ray diffraction of the [HOO^(R(12)pyH)][ReO_(4)] crystal reveals a layered structure with alternating polar and apolar sublayers. The mesophases also exhibit a lamellar arrangement detected by variable temperature powder X-ray diffraction. The CuCl_(4)^(2-) salts exhibit the best LC properties followed by the ReO_(4)^(-) ones due to low melting temperature and wide range of existence. The conductivity was probed for the mesophases in one species each from the ReO_(4)^(-) , and CuCl_(4)^(2-) families, and for the solid phase in one of the non-mesomorphic Cl^(-) salts. The highest ionic conductivity was found for the smectic mesophase of the ReO_(4)^(-) containing salt, whereas the solid phases of all salts were dominated by electronic contributions. The ionic conductivity may be favored by the mesophase lamellar structure., Ministerio de Economía y Competitividad (MINECO), Universidad Complutense de Madrid, Programa de Financiación de Universidad Complutense de Madrid-Santander Universidades (Spain), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
22. Electronic transport properties of Ti-impurity band in Si
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Mártil de la Plaza, Ignacio, González Díaz, Germán, Olea Ariza, Javier, Mártil de la Plaza, Ignacio, González Díaz, Germán, and Olea Ariza, Javier
- Abstract
© 2009 IOP Publishing Ltd. The authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for SIMS measurements, the Center for Microanalysis of Materials of the Universidad Autónoma de Madrid for RBS measurements, C.A.I. de difracción de rayos X of the Universidad Complutense de Madrid for GIXRD measurements and C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments. This work was made possible thanks to the FPI (Grant No BES-2005-7063) of the Spanish Ministry of Education and Science. This work was partially supported by the Projects NUMANCIA (No S-0505/ENE/000310) founded by the Comunidad de Madrid and GENESIS-FV (No CSD2006-00004) founded by the Spanish Consolider National Programme and by U.C.M.-C.A.M. under Grant CCG07-UCM/TIC-2804., In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results., FPI of the Spanish Ministry of Education and Science, Comunidad de Madrid, Spanish Consolider National Programme, U.C.M.-C.A.M., Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
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- 2023
23. Improved Ordering of Quasi-Two-Dimensional MoS2 via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS2+x
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Krbal, Miloš, Prokop, Vít, Přikryl, Jan, Rodriguez Pereira, Jhonatan, Pis, Igor, V. Kolobov, Alexander, Fons, Paul J, Saito, Yuta, Hatayama, Shogo, Sutou, Yuji, Krbal, Miloš, Prokop, Vít, Přikryl, Jan, Rodriguez Pereira, Jhonatan, Pis, Igor, V. Kolobov, Alexander, Fons, Paul J, Saito, Yuta, Hatayama, Shogo, and Sutou, Yuji
- Abstract
The synthesis of stoichiometric two-dimensional (2D) transition-metal dichalcogenides (TMDC) over large areas remains challenging. Using a combination of X-ray diffraction and X-ray absorption spectroscopy, we demonstrate the advantages of using a thin amorphous layer of S-rich MoS2 (MoS4 in this paper) for the growth of well-ordered crystalline MoS2 films via annealing at 900 degrees C. In contrast to the crystallization of stoichiometric amorphous MoS2, the crystallization of the as-depo sited amorphous MoS4 phase shows the strong preferred ordering of layered MoS2 on a Si/SiOx nontemplating substrate with the dominant (002) crystallographic plane and accompanying Kiessig fringes, which indicate the improved crystallinity of the MoS2 layers. A similar effect can only be achieved by the templated crystallization of an amorphous MoS2 thin film deposited on a c-plane sapphire substrate. We suggest that the crystal growth improvement originates from the lower coordination number (CN) of the Mo atoms in the MoS4 amorphous phase (CN = 4) in comparison with that of amorphous MoS2 (CN = 6) and the gradual release of free sulfur atoms from the thin film during crystallization., Syntéza stechiometrických dvourozměrných (2D) dichalkogenidů přechodných kovů (TMDC) na velké plochy je stále výzvou. Pomocí kombinace rentgenové difrakce a rentgenové absorpční spektroskopie demonstrujeme výhody použití tenké amorfní vrstvy MoS2 bohatého na S (MoS4 v tomto článku) pro růst dobře uspořádaných krystalických filmů MoS2 prostřednictvím žíhání při 900 °C. Na rozdíl od krystalizace stechiometrického amorfního MoS2, krystalizace amorfní MoS4 fáze vykazuje silně preferované uspořádání vrstveného MoS2 na Si/SiOx netemplátovém substrátu s dominantní (002) krystalografickou rovinou a doprovodnými Kiessigovými oscilacemi, které indikují vylepšené uspořádání vrstev MoS2. Podobného efektu lze dosáhnout pouze templátovou krystalizací amorfního tenkého filmu MoS2 naneseného na safírovém substrátu s orientací v rovině c. Domníváme se, že zlepšení růstu krystalů je způsobeno nižším koordinačním číslem (CN) atomů Mo v amorfní fázi MoS4 (CN = 4) ve srovnání s amorfním MoS2 (CN = 6) a postupným uvolňováním volných atomů síry z tenkého filmu během krystalizace.
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- 2023
24. Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage
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Chen, Chen, Chu, Yanmeng, Zhang, Linjun, Lin, Haojun, Fang, Wenzhang, Zhang, Zheyu, Zha, Chaofei, Wang, Kejia, Yang, Hui, Yu, Xuezhe, Gott, James A., Aagesen, Martin, Cheng, Zhiyuan, Huo, Suguo, Liu, Huiyun, Sanchez, Ana M., Zhang, Yunyan, Chen, Chen, Chu, Yanmeng, Zhang, Linjun, Lin, Haojun, Fang, Wenzhang, Zhang, Zheyu, Zha, Chaofei, Wang, Kejia, Yang, Hui, Yu, Xuezhe, Gott, James A., Aagesen, Martin, Cheng, Zhiyuan, Huo, Suguo, Liu, Huiyun, Sanchez, Ana M., and Zhang, Yunyan
- Abstract
For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW growth are still lacking, making it difficult to control the yield and often accompanying a high density of clusters. Here, we have performed a systematic study on this issue, which reveals that the effective V/III ratio at the initial growth stage is a critical factor that governs the NW growth yield. To initiate NW growth, the ratio should be high enough to allow the nucleation to extend to the entire contact area between the droplet and substrate, which can elevate the droplet off of the substrate, but it should not be too high in order to keep the droplet. This study also reveals that the cluster growth between NWs is also initiated from large droplets. This study provides a new angle from the growth condition to explain the cluster formation mechanism, which can guide high-yield NW growth.
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- 2023
25. Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response
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Abde Mayeen Shafi, Susobhan Das, Vladislav Khayrudinov, Er-Xiong Ding, Md Gius Uddin, Faisal Ahmed, Zhipei Sun, Harri Lipsanen, Harri Lipsanen Group, Centre of Excellence in Quantum Technology, QTF, Department of Electronics and Nanoengineering, Aalto-yliopisto, and Aalto University
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TRANSITION-METAL DICHALCOGENIDES ,SOLAR-CELLS ,DER-WAALS EPITAXY ,EFFICIENCY ,2-DIMENSIONAL MATERIALS ,General Chemical Engineering ,Materials Chemistry ,General Chemistry ,INTEGRATION ,EVOLUTION ,GAAS NANOWIRES - Abstract
Mixed-dimensional van der Waals heterostructures are promising for research and technological advances in photonics and optoelectronics. Here we report vapor-liquid-solid (VLS) method -based van der Waals epitaxy of one-dimensional InP nanowires (NWs) directly on two-dimensional MoS2. With optimized growth parameters (V/III ratio, flow rates of precursors, and growth temperature), we successfully grow high-quality InP NWs on MoS2. The density and vertical yield of NWs on MoS2 are significantly high. Due to the unique properties of both materials, we observe strong linear and nonlinear optical responses from the NW/MoS2 heterostructures. Intriguingly, in addition to strong second and third harmonic responses, the mixed-dimensional heterostructures show odd-order high harmonic generation up to seventh order. Our findings can open new possibilities for advancing attosecond physics on a new platform of mixed-dimensional heterostructures.
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- 2022
26. How to GIWAXS: Grazing Incidence Wide Angle X-Ray Scattering Applied to Metal Halide Perovskite Thin Films
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Steele, Julian A, Solano, Eduardo, Hardy, David, Dayton, Damara, Ladd, Dylan, White, Keith, Chen, Peng, Hou, Jingwei, Huang, Haowei, Saha, Rafikul Ali, Wang, Lianzhou, Gao, Feng, Hofkens, Johan, Roeffaers, Maarten BJ, Chernyshov, Dmitry, and Toney, Michael F
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Technology ,SOLAR-CELLS ,Science & Technology ,Energy & Fuels ,POWDER DIFFRACTION ,SURFACE ,Chemistry, Physical ,Physics ,Materials Science ,CHARGE-CARRIER DYNAMICS ,HYBRID PEROVSKITES ,synchrotron science ,Materials Science, Multidisciplinary ,RUDDLESDEN-POPPER ,perovskite solar cells ,Physics, Applied ,Chemistry ,Physics, Condensed Matter ,thin films ,Physical Sciences ,FAILURE MECHANISMS ,CRYSTAL-STRUCTURES ,PHASE-TRANSITIONS ,VERTICAL ORIENTATION ,GIWAXS - Abstract
ispartof: ADVANCED ENERGY MATERIALS status: Published online
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- 2023
27. Foldable Hole‐Transporting Materials for Merging Electronic States between Defective and Perfect Perovskite Sites
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Jianxing Xia, Povilas Luizys, Maryte Daskeviciene, Chuanxiao Xiao, Kristina Kantminiene, Vygintas Jankauskas, Kasparas Rakstys, Gediminas Kreiza, Xiao‐Xin Gao, Hiroyuki Kanda, Keith Gregory Brooks, Imanah Rafieh Alwani, Qurat Ul Ain, Jihua Zou, Guang Shao, Ruiyuan Hu, Zeliang Qiu, Andre Slonopas, Abdullah M. Asiri, Yi Zhang, Paul J. Dyson, Vytautas Getautis, and Mohammad Khaja Nazeeruddin
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hole-transporting materials ,photovoltaics ,solar-cells ,Mechanics of Materials ,Mechanical Engineering ,hole mobility ,General Materials Science ,passivation ,perovskite solar cells ,trap states ,performance ,efficient - Abstract
Defective and perfect sites naturally exist within electronic semiconductors, and considerable efforts to reduce defects to improve the performance of electronic devices, especially in hybrid organic-inorganic perovskites (ABX(3)), are undertaken. Herein, foldable hole-transporting materials (HTMs) are developed, and they extend the wavefunctions of A-site cations of perovskite, which, as hybridized electronic states, link the trap states (defective site) and valence band edge (perfect site) between the naturally defective and perfect sites of the perovskite surface, finally converting the discrete trap states of the perovskite as the continuous valence band to reduce trap recombination. Tailoring the foldability of the HTMs tunes the wavefunctions between defective and perfect surface sites, allowing the power conversion efficiency of a small cell to reach 23.22% and that of a mini-module (6.5 x 7 cm, active area = 30.24 cm(2)) to reach as high as 21.71% with a fill factor of 81%, the highest value reported for non-spiro-OMeTAD-based perovskite solar modules.
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- 2023
28. Post-polymerisation approaches for the rapid modification of conjugated polymer properties
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Florian Glöcklhofer, Martin Heeney, Martina Rimmele, FWF Austrian Science Fund (FWF), The Royal Society, EPRSC, and Engineering & Physical Science Research Council (EPSRC)
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Technology ,SOLAR-CELLS ,Polymers ,Chemistry, Multidisciplinary ,Materials Science ,BAND-GAP ,SEMICONDUCTING POLYMERS ,0904 Chemical Engineering ,FACILE FUNCTIONALIZATION ,Materials Science, Multidisciplinary ,CARBON NANOTUBES ,Polymerization ,RECENT PROGRESS ,General Materials Science ,Electrical and Electronic Engineering ,0912 Materials Engineering ,Science & Technology ,CLICK-CHEMISTRY ,ORGANIC PHOTOVOLTAICS ,Process Chemistry and Technology ,DONOR-ACCEPTOR CHROMOPHORES ,0303 Macromolecular and Materials Chemistry ,LADDER POLYMER ,Chemistry ,Mechanics of Materials ,Physical Sciences ,Electronics - Abstract
Post-polymerisation functionalisation provides a facile and efficient way for the introduction of functional groups on the backbone of conjugated polymers. Using post-polymerisation functionalisation approaches, the polymer chain length is usually not affected, meaning that the resulting polymers only differ in their attached functional groups or side chains, which makes them particularly interesting for investigating the influence of the different groups on the polymer properties. For such functionalisations, highly efficient and selective reactions are needed to avoid the formation of complex mixtures or permanent defects in the polymer backbone. A variety of suitable synthetic approaches and reactions that fulfil these criteria have been identified and reported. In this review, a thorough overview is given of the post-polymerisation functionalisations reported to date, with the methods grouped based on the type of reaction used: cycloaddition, oxidation/reduction, nucleophilic aromatic substitution, or halogenation and subsequent cross-coupling reaction. Instead of modifications on the aliphatic side chains of the conjugated polymers, we focus on modifications directly on the conjugated backbones, as these have the most pronounced effect on the optical and electronic properties. Some of the discussed materials have been used in applications, ranging from solar cells to bioelectronics. By providing an overview of this versatile and expanding field for the first time, we showcase post-polymerisation functionalisation as an exciting pathway for the creation of new conjugated materials for a range of applications.
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- 2022
29. Colloidal FAPbBr3 perovskite nanocrystals for light emission: what's going on?
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Harshita Bhatia, Biplab Ghosh, Elke Debroye, Debroye, Elke, and Ghosh, Biplab
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Technology ,SOLAR-CELLS ,Science & Technology ,MIXED-HALIDE PEROVSKITES ,Physics ,Materials Science ,HIGHLY LUMINESCENT ,Materials Science, Multidisciplinary ,BRIGHTLY LUMINESCENT ,General Chemistry ,QUANTUM DOTS ,EMITTING-DIODES ,Physics, Applied ,ELECTRONIC-STRUCTURE ,Physical Sciences ,Materials Chemistry ,FORMAMIDINIUM ,TIN IODIDE ,ULTRAPURE-GREEN - Abstract
Semiconducting nanomaterials have been widely explored in diverse optoelectronic applications. Colloidal lead halide perovskite nanocrystals (NCs) have recently been an excellent addition to the field of nanomaterials, promising an enticing building block in the field of light emission. In addition to the notable optoelectronic properties of perovskites, the colloidal NCs exhibit unique size-dependent optical properties due to the quantum size effect, which makes them highly attractive for light-emitting diodes (LEDs). In the past few years, perovskite-based LEDs (PeLEDs) have demonstrated a meteoritic rise in their external quantum efficiency (EQE) values, reaching over 20% so far. Among various halide perovskite compositions, FAPbBr3 and its variants remain one of the most interesting and sought-after compounds for green light emission. This review focuses on recent progress in the design and synthesis protocols of colloidal FAPbBr3 NCs and the emerging concepts in tailoring their surface chemistry. The structural and physicochemical features of lead halide perovskites along with a comprehensive discussion on their defect-tolerant properties are briefly outlined. Later, the prevalent synthesis, ligand, and compositional engineering strategies to boost the stability and photoluminescence quantum yield (PLQY) of FAPbBr3 NCs are extensively discussed. Finally, the fundamental concepts and recent progress on FAPbBr3-based LEDs, followed by a discussion of the challenges and prospects that are on the table for this enticing class of perovskites, are reviewed. ispartof: JOURNAL OF MATERIALS CHEMISTRY C vol:10 issue:37 pages:13437-13461 ispartof: location:England status: published
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- 2022
30. GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays
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Lucas Güniat, Lea Ghisalberti, Li Wang, Christian Dais, Nicholas Morgan, Didem Dede, Wonjong Kim, Akshay Balgarkashi, Jean-Baptiste Leran, Renato Minamisawa, Harun Solak, Craig Carter, and Anna Fontcuberta i Morral
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solar-cells ,oxidation ,silicon ,General Materials Science ,fabrication ,contact-angle ,contact-angle solar-cells oxidation silicon fabrication - Abstract
Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing times increase greatly when expanding the exposure area. In order to bring nanowire arrays one step closer to the wafer-scale we take a different approach and replace patterned nanoscale holes with Si nanopillar arrays. The method is compatible with photolithography methods such as phase-shift lithography or deep ultraviolet (DUV) stepper lithography. We provide clear evidence on the advantage of using nanopillars as opposed to nanoscale holes both for the control on the growth mechanisms and for the scalability. We identify the engineering of the contact angle as the key parameter to optimize the yield. In particular, we demonstrate how nanopillar oxidation is key to stabilize the Ga catalyst droplet and engineer the contact angle. We demonstrate how the position of the triple phase line at the SiO2/Si as opposed to the SiO2/vacuum interface is central for a successful growth. We compare our experiments with simulations performed in surface evolver (TM) and observe a strong correlation. Large-scale arrays using phase-shift lithography result in a maximum local vertical yield of 67% and a global chip-scale yield of 40%. We believe that, through a greater control over key processing steps typically achieved in a semiconductor fab it is possible to push this yield to 90+% and open perspectives for deterministic nanowire phase engineering at the wafer-scale.
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- 2022
31. Photodetection and scintillation characterizations of novel lead-bismuth double perovskite halides
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Francesco Maddalena, Marcin E. Witkowski, Michal Makowski, Abdellah Bachiri, null Arramel, Ting Yang, Muhammad Haris Mahyuddin, Matilde Baravaglio, Mohamed Boutchich, Winicjusz Drozdowski, Christophe Dujardin, Muhammad Danang Birowosuto, Cuong Dang, School of Electrical and Electronic Engineering, and CNRS International NTU THALES Research Alliances
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Materials [Engineering] ,Total-Energy Calculations ,Materials Chemistry ,Solar-Cells ,General Chemistry - Abstract
Double perovskites are materials exhibiting excellent properties for a variety of optical and electrical applications. In this paper, we characterize the structural, electronic, optical, electrical and scintillation properties of two variants of lead-bismuth halide double perovskite, with the general chemical composition of Cs4PbBi2X12 (X = Br, I). Density functional theory calculations reveal that the Br- and I-variants have direct and indirect bandgaps, respectively. The Cs4PbBi2X12 perovskites also show a broad emission down to near infrared, suggesting the presence of self trapped excitons. Photoluminescence time-resolved measurements show a very fast decay time with average decay times of 4.1 ns and 0.39 ns, for the Br- and I-variant, respectively. Photodetectors fabricated with the Cs4PbBi2X12 perovskites show clear rectification under bias, and a moderate response to illumination. Due to the presence of very heavy atoms and density of the material, the Cs4PbBi2X12 perovskites are strong X-ray absorbers with attenuation lengths comparable to Gd2O2S, a standard X-ray phosphor. The Cs4PbBi2X12 perovskites also show strong scintillation at cryogenic temperatures below 30 K, but thermal quenching severely reduces the light yield at room temperature. Although the performances of both crystals for photodetectors and scintillators are still low in comparison with some other perovskites, they are still a very promising materials due to their short absorption length and high theoretical maximum light yield, and their optoelectronic properties could be significantly improved by ion doping. Ministry of Education (MOE) The authors acknowledge financial supports from the Ministry of Education (Singapore), under its AcRF Tier 2 grant (MOE-T2EP50121-0012), the MERLION Program, and Thales-CINTRA Funding.
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- 2022
32. Overview of key results achieved in H2020 HighLite project helping to raise the EU PV industries' competitiveness
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Loic Tous, Jonathan Govaert, Samuel Harrison, Carolyn Carrière, Vincent Barth, Valentin Giglia, Florian Buchholz, Ning Chen, Andreas Halm, Antonin Faes, Gizem Nogay, Hugo Quest, Torsten Roessler, Tobias Fellmeth, Dirk Reinwand, Hannah Stolzenburg, Florian Schindler, Max Mittag, Arnaud Morlier, Matevz Bokalic, Kristijan Brecl, Miha Kikelj, Marko Topic, Josco Kester, Stefan Wendlandt, Marco Galiazzo, Alessandro Voltan, Giuseppe Galbiati, Marc Estruga Ortiga, Frank Torregrosa, Michael Grimm, Julius Denafas, Tadas Radavicius, Povilas Lukinskas, Tuukka Savisalo, Thomas Regrettier, Ivan Gordon, TOUS, Loic, GOVAERTS, Jonathan, Harrison, Samuel, Carriere, Carolyn, Barth, Vincent, Giglia, Valentin, Buchholz, Florian, Chen, Ning, Halm, Andreas, Faes, Antonin, Nogay, Gizem, Quest, Hugo, Roessler, Torsten, Fellmeth, Tobias, Reinwand, Dirk, Stolzenburg, Hannah, Schindler, Florian, Mittag, Max, MORLIER, Arnaud, Bokalic, Matevz, Brecl, Kristijan, Kikelj, Miha, Topic, Marko, Kester, Josco, Wendlandt, Stefan, Galiazzo, Marco, Voltan, Alessandro, Galbiati, Giuseppe, Ortiga, Marc Estruga, Torregrosa, Frank, Grimm, Michael, Denafas, Julius, Radavicius, Tadas, Lukinskas, Povilas, Savisalo, Tuukka, Regrettier, Thomas, and GORDON, Ivan
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separation ,h2020 ,ibc ,Renewable Energy, Sustainability and the Environment ,silicon ,shj ,gain ,vipv ,Condensed Matter Physics ,bapv ,Electronic, Optical and Magnetic Materials ,photovoltaics ,solar-cells ,bipv ,Electrical and Electronic Engineering - Abstract
The EU crystalline silicon (c-Si) PV manufacturing industry has faced strong foreign competition in the last decade. To strive in this competitive environment and differentiate itself from the competition, the EU c-Si PV manufacturing industry needs to (1) focus on highly performing c-Si PV technologies, (2) include sustainability by design, and (3) develop differentiated PV module designs for a broad range of PV applications to tap into rapidly growing existing and new markets. This is precisely the aim of the 3.5 years long H2020 funded HighLite project, which started in October 2019 under the work program LC-SC3-RES-15-2019: Increase the competitiveness of the EU PV manufacturing industry. To achieve this goal, the HighLite project focuses on bringing two advanced PV module designs and the related manufacturing solutions to higher technology readiness levels (TRL). The first module design aims to combine the benefits of n-type silicon heterojunction (SHJ) cells (high efficiency and bifaciality potential, improved sustainability, rapidly growing supply chain in the EU) with the ones of shingle assembly (higher packing density, improved modularity, and excellent aesthetics). The second module design is based on the assembly of low-cost industrial interdigitated back-contact (IBC) cells cut in half or smaller, which is interesting to improve module efficiencies and increase modularity (key for application in buildings, vehicles, etc.). This contribution provides an overview of the key results achieved so far by the HighLite project partners and discusses their relevance to help raise the EU PV industries' competitiveness. We report on promising high-efficiency industrial cell results (24.1% SHJ cell with a shingle layout and 23.9% IBC cell with passivated contacts), novel approaches for high-throughput laser cutting and edge re-passivation, module designs for BAPV, BIPV, and VIPV applications passing extended testing, and first 1-year outdoor monitoring results compared with benchmark products. This project has received funding from the European Union's Horizon 2020 Programme for research, technological development, and demonstration under Grant Agreement no. 857793.
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- 2023
33. An embedded interfacial network stabilizes inorganic CsPbI3 perovskite thin films
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Julian A. Steele, Tom Braeckevelt, Vittal Prakasam, Giedrius Degutis, Haifeng Yuan, Handong Jin, Eduardo Solano, Pascal Puech, Shreya Basak, Maria Isabel Pintor-Monroy, Hans Van Gorp, Guillaume Fleury, Ruo Xi Yang, Zhenni Lin, Haowei Huang, Elke Debroye, Dmitry Chernyshov, Bin Chen, Mingyang Wei, Yi Hou, Robert Gehlhaar, Jan Genoe, Steven De Feyter, Sven M. J. Rogge, Aron Walsh, Edward H. Sargent, Peidong Yang, Johan Hofkens, Veronique Van Speybroeck, and Maarten B. J. Roeffaers
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DYNAMICS ,SOLAR-CELLS ,Technology and Engineering ,Multidisciplinary ,EFFICIENCY ,CESIUM ,General Physics and Astronomy ,General Chemistry ,General Biochemistry, Genetics and Molecular Biology ,LAYERS - Abstract
The black perovskite phase of CsPbI3 is promising for optoelectronic applications; however, it is unstable under ambient conditions, transforming within minutes into an optically inactive yellow phase, a fact that has so far prevented its widespread adoption. Here we use coarse photolithography to embed a PbI2-based interfacial microstructure into otherwise-unstable CsPbI3 perovskite thin films and devices. Films fitted with a tessellating microgrid are rendered resistant to moisture-triggered decay and exhibit enhanced long-term stability of the black phase (beyond 2.5 years in a dry environment), due to increasing the phase transition energy barrier and limiting the spread of potential yellow phase formation to structurally isolated domains of the grid. This stabilizing effect is readily achieved at the device level, where unencapsulated CsPbI3 perovskite photodetectors display ambient-stable operation. These findings provide insights into the nature of phase destabilization in emerging CsPbI3 perovskite devices and demonstrate an effective stabilization procedure which is entirely orthogonal to existing approaches.
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- 2022
34. Visible-Light-Driven Water Oxidation on Self-Assembled Metal-Free Organic@Carbon Junctions at Neutral pH
- Author
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Olaya, Astrid J., Riva, Julieta S., Baster, Dominika, Silva, Wanderson O., Pichard, Francois, and Girault, Hubert H.
- Subjects
endocrine system ,redox mediator ,photochemistry ,scaffold ,respiratory system ,o-2 ,Article ,photocatalysts ,hydrogen evolution ,Chemistry ,solar-cells ,photoanodes ,water oxidation ,hydrogen ,generation ,evolution ,redox shuttles ,sustainable ,QD1-999 ,catalyst - Abstract
Sustainable water oxidation requires low-cost, stable, and efficient redox couples, photosensitizers, and catalysts. Here, we introduce the in situ self-assembly of metal-atom-free organic-based semiconductive structures on the surface of carbon supports. The resulting TTF/TTF•+@carbon junction (TTF = tetrathiafulvalene) acts as an all-in-one highly stable redox-shuttle/photosensitizer/molecular-catalyst triad for the visible-light-driven water oxidation reaction (WOR) at neutral pH, eliminating the need for metallic or organometallic catalysts and sacrificial electron acceptors. A water/butyronitrile emulsion was used to physically separate the photoproducts of the WOR, H+ and TTF, allowing the extraction and subsequent reduction of protons in water, and the in situ electrochemical oxidation of TTF to TTF•+ on carbon in butyronitrile by constant anode potential electrolysis. During 100 h, no decomposition of TTF was observed and O2 was generated from the emulsion while H2 was constantly produced in the aqueous phase. This work opens new perspectives for a new generation of metal-atom-free, low-cost, redox-driven water-splitting strategies.
- Published
- 2021
35. Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain
- Author
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Jonatan Holmér, Lunjie Zeng, Thomas Kanne, Peter Krogstrup, Jesper Nygård, and Eva Olsson
- Subjects
I-V characteristics ,SOLAR-CELLS ,Letter ,Materials science ,I- V characteristics ,EFFICIENCY ENHANCEMENT ,Band gap ,INP ,Nanowire ,Photodetector ,Textile, Rubber and Polymeric Materials ,Bioengineering ,photocurrent ,strain ,Strain engineering ,Photovoltaics ,ABSORPTION ,Other Materials Engineering ,General Materials Science ,I−V characteristics ,III−V nanowires ,Nanoprobing ,Photocurrent ,Strain (chemistry) ,business.industry ,Mechanical Engineering ,General Chemistry ,III-V nanowires ,Condensed Matter Physics ,EBIC ,solar cells ,Optoelectronics ,II I- V nanowires ,business - Abstract
III–V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current–voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.
- Published
- 2021
36. Predicting Power Conversion Efficiency of Organic Photovoltaics: Models and Data Analysis
- Author
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Markus Kraft, Andreas Eibeck, Daniel Nurkowski, Jinkui Wu, Sebastian Mosbach, Jethro Akroyd, Angiras Menon, Jiaru Bai, Li Zhou, School of Chemical and Biomedical Engineering, Cambridge Centre for Advanced Research and Education, Nurkowski, Daniel [0000-0002-4983-8715], Bai, Jiaru [0000-0002-1246-1993], Wu, Jinkui [0000-0002-4839-338X], Zhou, Li [0000-0003-3539-7573], Mosbach, Sebastian [0000-0001-7018-9433], Akroyd, Jethro [0000-0002-2143-8656], Kraft, Markus [0000-0002-4293-8924], and Apollo - University of Cambridge Repository
- Subjects
3403 Macromolecular and Materials Chemistry ,34 Chemical Sciences ,ComputingMilieux_THECOMPUTINGPROFESSION ,General Chemical Engineering ,media_common.quotation_subject ,Data_MISCELLANEOUS ,4004 Chemical Engineering ,Chemical engineering [Engineering] ,Foundation (engineering) ,Solar-Cells ,General Chemistry ,Management ,Prime minister ,Scholarship ,Chemistry ,Clean Energy Project ,Excellence ,Political science ,3406 Physical Chemistry ,7 Affordable and Clean Energy ,China ,QD1-999 ,ComputingMilieux_MISCELLANEOUS ,40 Engineering ,media_common - Abstract
Funder: Cambridge Trust, Funder: National Research Foundation Singapore, Funder: Alexander von Humboldt-Stiftung, Funder: China Scholarship Council, In this paper, the ability of three selected machine learning neural and baseline models in predicting the power conversion efficiency (PCE) of organic photovoltaics (OPVs) using molecular structure information as an input is assessed. The bidirectional long short-term memory (gFSI/BiLSTM), attentive fingerprints (attentive FP), and simple graph neural networks (simple GNN) as well as baseline support vector regression (SVR), random forests (RF), and high-dimensional model representation (HDMR) methods are trained to both the large and computational Harvard clean energy project database (CEPDB) and the much smaller experimental Harvard organic photovoltaic 15 dataset (HOPV15). It was found that the neural-based models generally performed better on the computational dataset with the attentive FP model reaching a state-of-the-art performance with the test set mean squared error of 0.071. The experimental dataset proved much harder to fit, with all of the models exhibiting a rather poor performance. Contrary to the computational dataset, the baseline models were found to perform better than the neural models. To improve the ability of machine learning models to predict PCEs for OPVs, either better computational results that correlate well with experiments or more experimental data at well-controlled conditions are likely required.
- Published
- 2021
37. Antimicrobial activity enhancement of PVA/chitosan films with the additive of CZTS quantum dots
- Author
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Seda Ceylan, Rıdvan Küçükosman, Fatma Yurt, Derya Özel, İsmail Öztürk, Didem Demir, and Kasim Ocakoglu
- Subjects
Chitosan ,Membranes ,Polymers and Plastics ,Miscibility ,Solar-Cells ,Hydrogels ,General Chemistry ,Condensed Matter Physics ,CZTS ,Nanocrystals ,Hydrothermal Synthesis ,PVA ,Cu2ZnSnS4 quantum dots ,Cu2znsns4 ,Materials Chemistry ,Nanoparticles - Abstract
The wound environment is a breeding ground for pathogens, and traditional wound dressing materials lack antibacterial properties. In this work, we aimed to develop PVA/chitosan (P/C)-based wound dressing scaffolds with anti-infective properties using Cu2ZnSnS4 quantum dots (CZTS QDs) to prevent infections in the wound. CZTS quantum dots were prepared by a simple hydrothermal process and characterized using appropriate techniques such as TEM, XRD, FTIR spectrum, and UV-Vis absorption spectroscopy. CZTS QDs were subsequently loaded at different concentrations onto PVA/chitosan membranes (0, 1.6, 2.5 and 3.3% w/w, based on the total polymer quantity). The chemical structure, contact angle and mechanical properties of the membranes were analyzed, and their antimicrobial activities and cell viability were also investigated. The cytocompatibility of the membranes and cell morphology was investigated using a 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay and SEM. Based on studies on the interactions between membranes and cells, it was determined that incorporation of CZTS QDs into the membrane did not cause toxicity. To the best of our knowledge, this is the first report on loading CZTS QDs into membranes for tissue engineering applications, and the overall findings suggest that CZTS QDs-integrated membranes might have potentially appealing uses as antimicrobial films for wound healing., Tarsus University Scientific Research Projects Coordination Department; [MF.22.003], AcknowledgementsThe authors thank the Tarsus University Scientific Research Projects Coordination Department (Project no: MF.22.003) for the supports.
- Published
- 2022
38. Fullerene derivatives with oligoethylene–glycol side chains: an investigation on the origin of their outstanding transport properties†
- Author
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Jan C. Hummelen, Maria Antonietta Loi, Fatimeh Jahani, Li Qiu, Selim Sami, Giuseppe Portale, Jingjin Dong, Riccardo Alessandri, Remco W. A. Havenith, Siewert J. Marrink, Daniel M. Balazs, Macromolecular Chemistry & New Polymeric Materials, Molecular Dynamics, Photophysics and OptoElectronics, Molecular Energy Materials, and Theoretical Chemistry
- Subjects
SOLAR-CELLS ,Materials science ,EFFICIENCY ,02 engineering and technology ,Dielectric ,Substrate (electronics) ,010402 general chemistry ,01 natural sciences ,chemistry.chemical_compound ,Molecular dynamics ,Materials Chemistry ,Side chain ,Thin film ,Organic electronics ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,PCBM ,Chemistry ,chemistry ,Chemical engineering ,MORPHOLOGY ,Crystallite ,0210 nano-technology ,C-60 ,Ethylene glycol - Abstract
For many years, fullerene derivatives have been the main n-type material of organic electronics and optoelectronics. Recently, fullerene derivatives functionalized with ethylene glycol (EG) side chains have been showing important properties such as enhanced dielectric constants, facile doping and enhanced self-assembly capabilities. Here, we have prepared field-effect transistors using a series of these fullerene derivatives equipped with EG side chains of different lengths. Transport data show the beneficial effect of increasing the EG side chain. In order to understand the material properties, full structural determination of these fullerene derivatives has been achieved by coupling the X-ray data with molecular dynamics (MD) simulations. The increase in transport properties is paired with the formation of extended layered structures, efficient molecular packing and an increase in the crystallite alignment. The layer-like structure is composed of conducting layers, containing of closely packed C60 balls approaching the inter-distance of 1 nm, that are separated by well-defined EG layers, where the EG chains are rather splayed with the chain direction almost perpendicular to the layer normal. Such a layered structure appears highly ordered and highly aligned with the C60 planes oriented parallel to the substrate in the thin film configuration. The order inside the thin film increases with the EG chain length, allowing the systems to achieve mobilities as high as 0.053 cm2 V−1 s−1. Our work elucidates the structure of these interesting semiconducting organic molecules and shows that the synergistic use of X-ray structural analysis and MD simulations is a powerful tool to identify the structure of thin organic films for optoelectronic applications., The synergistic use of X-ray scattering and molecular dynamics simulations reveals the structure–property relationships of [60]fullerene derivatives with oligoethylene–glycol side chains.
- Published
- 2021
39. Toward Stable Monolithic Perovskite/Silicon Tandem Photovoltaics: A Six-Month Outdoor Performance Study in a Hot and Humid Climate
- Author
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Michael Salvador, Esma Ugur, Alessandro J. Mirabelli, Michele De Bastiani, Furkan Halis Isikgor, George T. Harrison, Bin Chen, Yi Hou, Thomas Allen, Shynggys Zhumagali, Maxime Babics, Edward H. Sargent, Erkan Aydin, Stefaan De Wolf, Jiang Liu, Atteq ur Rehman, Semen Shikin, Emmanuel Van Kerschaver, Quentin Jeangros, and Christophe Ballif
- Subjects
Engineering ,design ,Energy Engineering and Power Technology ,Library science ,induced degradation ,02 engineering and technology ,migration ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,Materials Chemistry ,Naval research ,Renewable Energy, Sustainability and the Environment ,business.industry ,stability ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Navy ,solar-cells ,Fuel Technology ,Chemistry (miscellaneous) ,heat ,light ,0210 nano-technology ,business ,Hot and humid - Abstract
Perovskite/silicon tandem solar cells are emerging as a high-efficiency and prospectively cost-effective solar technology with great promise for deployment at the utility scale. However, despite the remarkable performance progress reported lately, assuring sufficient device stability-particularly of the perovskite top cell-remains a challenge on the path to practical impact. In this work, we analyze the outdoor performance of encapsulated bifacial perovskite/silicon tandems, by carrying out field-testing in Saudi Arabia. Over a six month experiment, we find that the open circuit voltage retains its initial value, whereas the fill factor degrades, which is found to have two causes. A first degradation mechanism is linked with ion migration in the perovskite and is largely reversible overnight, though it does induce hysteretic behavior over time. A second, irreversible, mechanism is caused by corrosion of the silver metal top contact with the formation of silver iodide. These findings provide directions for the design of new and more stable perovskite/silicon tandems
- Published
- 2021
40. Fighting Health Hazards in Lead Halide Perovskite Optoelectronic Devices with Transparent Phosphate Salts
- Author
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Xavier Mettan, Lidia Rossi, Pavao Andričević, Endre Horváth, Márton Kollár, and László Forró
- Subjects
phosphate salts ,Materials science ,business.industry ,Phosphate salts ,Photovoltaic system ,Energy conversion efficiency ,Halide ,chemistry.chemical_element ,orthophosphates ,lead capturing ,stability ,Cadmium telluride photovoltaics ,perovskite photovoltaics ,lead halide perovskite ,solar-cells ,Lead (geology) ,chemistry ,optoelectronic devices ,Optoelectronics ,General Materials Science ,Gallium ,business ,Perovskite (structure) - Abstract
Organic-inorganic lead halide perovskite (CH3NH3PbI3) solar cells have surpassed 25% power conversion efficiency, being ready for industrial-scale production of cheap photovoltaic (PV) panels. In this action, the major hurdle is its lead content, which in case of device failure, could be washed into the soil, entering the food chain. Since there is a zero tolerance on lead in the human organism, this health hazard is a critical obstacle for commercialization. Here, we propose a solution to this problem by incorporating phosphate salts (e.g., (NH4)(2)HPO4) in PV and other perovskite-based optoelectronic devices in various architectures. Phosphate salts do not react with CH3NH3PbI3 and do not alter its advantageous optoelectronic properties, but in a wet environment, they react immediately with lead, forming a highly insoluble compound, precluding this way the spread of lead into the environment. It is expected that this study will stimulate research, enabling lead halide perovskite solar cells to reach a similar environmental risk category as the commercially available, nonwater-soluble heavy metal-containing CdTe and gallium diselenide technologies.
- Published
- 2021
41. Silylethynyl Substitution for Preventing Aggregate Formation in Perylene Diimides
- Author
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Andrew P. Monkman, Erkan Aksoy, Chunyong Li, Andrew Danos, and Canan Varlikli
- Subjects
Electrochemical Properties ,Photoluminescence ,Materials science ,Organic solar cell ,Energy-Transfer ,Dimer ,Quantum yield ,Solar-Cells ,Excimer ,Photochemistry ,chemistry.chemical_compound ,Ultrafast laser spectroscopy ,Physical and Theoretical Chemistry ,Solid-State Emission ,Electron-Transport Materials ,Red ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,General Energy ,chemistry ,Excimer Formation ,Cyclic voltammetry ,Configuration ,Derivatives ,Perylene - Abstract
Ethynylene-bridged perylene diimides (PDIs) with different sized silane groups have been synthesized as a steric blocking group to prevent the formation of non-radiative trap sites, for example, strong H-aggregates and other dimers or excimers. Excited singlet-state exciton dynamics were investigated by time-resolved photoluminescence and ultrafast pump-probe transient absorption spectroscopy. The spectra of the excimer or dimer aggregates formed by the PDIs at high concentrations were also determined. Although the photophysical properties of the bare and shielded PDIs are identical at micromolar concentrations, more shielded PDI2 and PDI3 exhibited resistance to aggregation, retaining higher photoluminescence quantum yield even at 10 mM concentration and in neat films. The PDIs also exhibited high photostability (1 h of continuous excitation), as well as electrochemical stability (multiple cycles with cyclic voltammetry). Prevention of dimer/aggregate formation in this manner will extend the uses of PDIs to a variety of high concentration photonics and optoelectronic applications, such as organic light-emitting diodes, organic photovoltaics, and luminescent solar concentrators., Scientific and Technological Research Council of Turkey (TUBITAK) BIDEB-2214-A [1059B141800476]; TUBITAK [119F031]; HyperOLED project from the European Unions's Horizon 2020 Research and Innovation Program [732013], E.A. thanks The Scientific and Technological Research Council of Turkey (TUBITAK) BIDEB-2214-A (Appl. #1059B141800476) who supported this research financially. for time-resolved PL and ultrafast pump-probe TAS. E.A. and C.V. also thank the project support funds of TUBITAK (grant #119F031) for financial support of the synthesis, structural, electrochemical, and optical characterizations of perylene derivatives. A.D. and A.P.M. were supported by the HyperOLED project from the European Unions's Horizon 2020 Research and Innovation Program under grant agreement number 732013.
- Published
- 2021
42. Observation of large Rashba spin–orbit coupling at room temperature in compositionally engineered perovskite single crystals and application in high performance photodetectors
- Author
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Fabio Kurt Schneider, Filippo De Angelis, Maria Vasilopoulou, Bin Hu, Abd. Rashid bin Mohd Yusoff, Olga S. Ovchinnikova, Yongtao Liu, Habib Ullah, Wilson Jose da Silva, Anton V. Ievlev, Peng Gao, Arup Mahata, and Mohammad Khaja Nazeeruddin
- Subjects
Materials science ,Photoluminescence ,semiconductors ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,mos2 ,Condensed Matter::Materials Science ,halide perovskites ,Figure of merit ,General Materials Science ,Perovskite (structure) ,carrier lifetime ,Condensed matter physics ,business.industry ,Mechanical Engineering ,graphene ,Carrier lifetime ,Spin–orbit interaction ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,solar-cells ,Semiconductor ,Mechanics of Materials ,Condensed Matter::Strongly Correlated Electrons ,0210 nano-technology ,business ,Single crystal ,contact ,Rashba effect - Abstract
Indirect absorption extended below the direct transition edge and increase in carrier lifetime derived from Rashba spin–orbit coupling may advance theoptoelectronicapplications of metalhalideperovskites. Spin-orbit coupling in halide perovskites is due to the presence of heavy elements in their structure. However, when these materials lack an inversion symmetry, for example by the application of strain, spin–orbit coupling becomes odd in the electron’s momentum giving rise to a splitting in the electronic energy bands. Here we report on the observation of a large Rashba splitting of 117 meV at room temperature, as predicted by relativistic first-principles calculations, in halide perovskitesingle crystalsthrough a facile compositional engineering approach. Partial substitution oforganic cationsbyrubidiumin single crystals induces significant indirect absorption and dual peakphotoluminescenceas a result of a large Rashba splitting. We measured circularly polarized photoluminescence and magneto-photoluminescence in perovskite films printed by single crystals as well as magneto-electroluminescence and magneto-photocurrent in spin-LEDs based on perovskite single crystals. They indicated significant spin-momentum locking due to the large Rashba effect. A hybrid perovskite single crystalphotodetectorachieved record figures of merit, including detectivity of more than 1.3 × 1018Jones which represents a three orders of magnitude improvement compared to the to date record. These findings show that facile compositional engineering of perovskite single crystals holds great promise for further advancing the optoelectronic properties of existing materials.
- Published
- 2021
43. Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/ InGaAs Nanowires
- Author
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Qu, Jiangtao, Beznasyuk, Daria, Cassidy, Maja, Tanta, Rawa, Yang, Limei, Holmes, Natalie P., Griffith, Matthew J., Krogstrup, Peter, Cairney, Julie M., Qu, Jiangtao, Beznasyuk, Daria, Cassidy, Maja, Tanta, Rawa, Yang, Limei, Holmes, Natalie P., Griffith, Matthew J., Krogstrup, Peter, and Cairney, Julie M.
- Abstract
Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor nanowire arrays were grown by selective area epitaxy (SAE) using molecular beam epitaxy (MBE), and their subsequent properties were analyzed by a combination of atom probe tomography (APT) and aberration -corrected transmission electron microscopy (TEM). Results revealed the chemical composition of the outermost thin InAs layer, a fine variation in the indium content at the InAs/InGaAs interface, and lightly incorporated element tracing. The results highlight the importance of correlative microscopy approaches in revealing complex nanoscale structures, with TEM being uniquely suited to interrogating the crystallography of InGaAs NWs, whereas APT is capable of three-dimensional (3D) elemental mapping, revealing the subtle compositional variation near the boundary region. This work demonstrates a detailed pathway for the nanoscale structural assessment of novel one-dimensional (1D) nanomaterials.
- Published
- 2022
44. Dynamic Nuclear Polarization Enables NMR of Surface Passivating Agents on Hybrid Perovskite Thin Films
- Author
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Aditya Mishra, Michael A. Hope, Masaud Almalki, Lukas Pfeifer, Shaik Mohammed Zakeeruddin, Michael Grätzel, and Lyndon Emsley
- Subjects
Thin-film ,spectroscopy ,cation dynamics ,General Chemistry ,Biochemistry ,Catalysis ,efficient ,methylammonium ,Colloid and Surface Chemistry ,lead halide perovskites ,solar-cells ,enhanced nmr ,Surface Passivation ,solid-state nmr ,Perovskites ,iodide ,MAS DNP NMR ,phase segregation - Abstract
Surface and bulk molecular modulators are the key to improving the efficiency and stability of hybrid perovskite solar cells. However, due to their low concentration, heterogeneous environments, and low sample mass, it remains challenging to characterize their structure and dynamics at the atomic level, as required to establish structure-activity relationships. Nuclear magnetic resonance (NMR) spectroscopy has revealed a wealth of information on the atomic-level structure of hybrid perovskites, but the inherent insensitivity of NMR severely limits its utility to characterize thin-film samples. Dynamic nuclear polarization (DNP) can enhance NMR sensitivity by orders of magnitude, but DNP methods for perovskite materials have so far been limited. Here, we determined the factors that limit the efficiency of DNP NMR for perovskite samples by systematically studying layered hybrid perovskite analogues. We find that the fast-relaxing dynamic cation is the major impediment to higher DNP efficiency, while microwave absorption and particle morphology play a secondary role. We then show that the former can be mitigated by deuteration, enabling 1H DNP enhancement factors of up to 100, which can be harnessed to enhance signals from dopants or additives present in very low concentrations. Specifically, using this new DNP methodology at a high magnetic field and with small sample volumes, we have recorded the NMR spectrum of the 20 nm (6 mu g) passivating layer on a single perovskite thin film, revealing a two-dimensional (2D) layered perovskite structure at the surface that resembles the n = 1 homologue but which has greater disorder than in bulk layered perovskites.
- Published
- 2022
45. Lattice strain suppresses point defect formation in halide perovskites
- Author
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Caner Deger, Shaun Tan, K. N. Houk, Yang Yang, Ilhan Yavuz, and Deger C., Tan S., Houk K. N., Yang Y., YAVUZ İ.
- Subjects
DYNAMICS ,SOLAR-CELLS ,Temel Bilimler (SCI) ,Physical Chemistry ,NANOBİLİM VE NANOTEKNOLOJİ ,MATERIALS SCIENCE ,SEMICONDUCTORS ,Kimya ,Surfaces, Interfaces, Thin Films and Nanosystems ,CHEMISTRY ,Materials Chemistry ,General Materials Science ,TOLERANCE FACTOR ,lattice strain ,Temel Bilimler ,Physics ,KİMYA, FİZİKSEL ,Metals and Alloys ,Fizikokimya ,Surfaces and Interfaces ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Chemistry (miscellaneous) ,Natural Sciences (SCI) ,Physical Sciences ,Engineering and Technology ,FORMAMIDINIUM ,Natural Sciences ,CHEMISTRY, PHYSICAL ,NANOSCIENCE & NANOTECHNOLOGY ,EFFICIENCY ,MATERIALS SCIENCE, MULTIDISCIPLINARY ,Fizik ,perovskite solar cells ,halide perovskites ,Electrical and Electronic Engineering ,Physical and Theoretical Chemistry ,MALZEME BİLİMİ, ÇOKDİSİPLİNLİ ,Engineering, Computing & Technology (ENG) ,PHYSICS, APPLIED ,STABILITY ,defect formation ,TOTAL-ENERGY CALCULATIONS ,Mühendislik, Bilişim ve Teknoloji (ENG) ,Statistical and Nonlinear Physics ,General Chemistry ,PERFORMANCE ,Condensed Matter 1: Structural, Mechanical and Thermal Properties ,Yüzeyler ve arayüzeyler ,İnce filmler ve nanosistemler ,Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler ,FİZİK, UYGULAMALI ,CATIONS ,Mühendislik ve Teknoloji ,Malzeme Bilimi - Abstract
We computationally investigate the impact of crystal strain on the formation of native point defects likely to be formed in halide perovskites; A-site cation antisite (I-A), Pb antisite (I-Pb), A-site cation vacany (V-A), I vacancy (V-I), Pb vacancy (V-Pb), and I interstitial (1). We systematically identify compressive and tensile strain to CsPbI3, FAPbI(3), and MAPbI(3) perovskite structures. We observe that while each type of defect has a unique behaviour, overall, the defect formation in FAPbI(3) is much more sensitive to the strain. The compressive strain can enhance the formation energy of neutral I-pb and I-I up to 15% for FAPbI(3), depending on the growth conditions. We show that the strain not only controls the formation of defects but also their transition levels in the band gap: A deep level can be transformed into a shallow level by the strain. We anticipate that tailoring the lattice strain can be used as a defect passivation mechanism for future studies.
- Published
- 2022
46. Structural, Electronic, and Optical Properties of the Vacancy-Ordered Bismuth–Antimony Perovskites (CH3NH3)3(Bi1–xSbx)2I9
- Author
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Bowon Yoo, Hyejin Park, Dibyajyoti Ghosh, M. Saiful Islam, Saif A. Haque, Ganghong Min, and Alex Aziz
- Subjects
Technology ,SOLAR-CELLS ,Materials Science ,chemistry.chemical_element ,Materials Science, Multidisciplinary ,02 engineering and technology ,010402 general chemistry ,Physical Chemistry ,01 natural sciences ,09 Engineering ,Bismuth ,LAYERED-PHASE ,Antimony ,10 Technology ,Vacancy defect ,IODIDE ,ABSORPTION ,Nanoscience & Nanotechnology ,LEAD-FREE ,Physical and Theoretical Chemistry ,CATION ,Science & Technology ,Chemistry, Physical ,business.industry ,TOTAL-ENERGY CALCULATIONS ,Pb toxicity ,OPTOELECTRONIC PROPERTIES ,021001 nanoscience & nanotechnology ,HALIDE PEROVSKITES ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Chemistry ,LIGHT ,General Energy ,chemistry ,Physical Sciences ,Science & Technology - Other Topics ,Optoelectronics ,03 Chemical Sciences ,0210 nano-technology ,business - Abstract
Lead-based perovskites have achieved excellent photovoltaic efficiencies in the last decade, but key intrinsic issues related to their instability and Pb toxicity need to be overcome for their successful commercialization. In this combined experimental–computational study, we investigate the structural and optoelectronic properties of the novel vacancy-ordered lead-free perovskites (CH3NH3)3(Bi1–xSbx)2I9. We find complete miscibility across the solid solution with less than 1% change in the lattice parameters. This miscibility extends to the full configurational disorder between Bi and Sb and a subsequent reduction in the experimentally observed photoluminescence quantum yields. We highlight the significance of the observed band-gap bowing as a means to fine-tune the electronic structure for optoelectronic devices. The substitution of Bi with Sb leads to lower calculated electron and hole effective masses that result in lower exciton binding energies. We show a clear shift from a strongly bound to a weakly bound excitonic regime with the substitution of Bi with Sb, which correlates with the increase in device performance.
- Published
- 2021
47. Probing proton diffusion as a guide to environmental stability in powder-engineered FAPbI3 and CsFAPbI3 perovskites
- Author
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Haris, M. P. U., Xia, Jianxing, Kazim, Samrana, Molenda, Zuzanna, Hirsch, Lionel, Buffeteau, Thierry, Bassani, Dario M., Nazeeruddin, M.K., and Ahmad, Shahzada
- Subjects
General Engineering ,General Physics and Astronomy ,General Chemistry ,degradation mechanism ,perovskite solar cells ,lead iodide perovskite ,ionic liquids ,PM-IRRAS ,solar-cells ,proton diffusion ,General Energy ,relaxation ,additives ,General Materials Science ,formamidinium ,performance - Abstract
Formamidinium lead iodide-based solar cells show promising device reliability. The grain imperfection can be further suppressed by developing powder methodology. The water uptake capability is critical for the stability of α-formamidinium lead triiodide (FAPbI3) thin films, and elucidating the migration of hydrogen species is challenging using routine techniques such as imaging or mass spectroscopy. Here, we decipher the proton diffusion to quantify indirect monitoring of H migration by following the N–D vibration using transmission infrared spectroscopy. The technique allows a direct assessment of the perovskite degradation associated with moisture. The inclusion of Cs in FAPbI3, reveals significant differences in proton diffusion rates, attesting to its impact. CsFAPbI3’s ability to block the active layer access by water molecules is five times higher than α-FAPbI3,which is significantly higher than methylammonium lead triiodide (MAPbI3). Our protocol directly probes the local environment of the material to identify its intrinsic degradation mechanisms and stability, a key requirement for optoelectronic applications.
- Published
- 2023
48. S-Rich PbS Quantum Dots
- Author
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Nataliia Sukharevska, Maksym V. Kovalenko, Dmytro Bederak, Maria Antonietta Loi, Jamo Momand, Dmitry N. Dirin, Zernike Institute for Advanced Materials, Photophysics and OptoElectronics, and Nanostructured Materials and Interfaces
- Subjects
SOLAR-CELLS ,Fabrication ,Materials science ,General Chemical Engineering ,SULFUR ,02 engineering and technology ,010402 general chemistry ,Post synthesis ,CAPPING LIGANDS ,01 natural sciences ,Materials Chemistry ,Thin film ,POLYSULFIDES ,TEMPERATURE ,business.industry ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,NANOCRYSTALS ,Nanocrystal ,Quantum dot ,Optoelectronics ,POST-SYNTHESIS ,Colloidal quantum dots ,0210 nano-technology ,business - Abstract
PbS colloidal quantum dots (CQDs) are versatile building blocks for bottom-up fabrication of various optoelectronic devices. The transport properties of thin films of this class of materials depend on the size of the CQDs, their surface ligands, and stoichiometry. The most common synthetic methods yield PbS CQDs with an excess of Pb atoms, which induces n-type transport properties in CQD films. In this work, we developed a new synthesis, which offers S-rich PbS CQDs. Thanks to their sufficient colloidal stability in nonpolar solvents, we established a protocol for the integration of these CQDs into thin field-effect transistors and found strong hole-dominated transport with a hole mobility of about 1 × 10–2 cm2/Vs. Moreover, we were able to enhance the electron mobility for almost two orders of magnitude while keeping the hole mobility nearly the same. This approach allows us to obtain reliably p-doped PbS CQDs, which can be used for the fabrication of various electronic and optoelectronic devices., Chemistry of Materials, 33 (1), ISSN:0897-4756
- Published
- 2021
49. Atomic-scale insight into the enhanced surface stability of methylammonium lead iodide perovskite by controlled deposition of lead chloride
- Author
-
Zhendong Guo, Yabing Qi, Wan-Jian Yin, Guoqing Tong, Longbin Qiu, Luis K. Ono, Jeremy Hieulle, Robin Ohmann, Collin Stecker, and Afshan Jamshaid
- Subjects
SOLAR-CELLS ,Materials science ,Lead chloride ,Iodide ,Inverse photoemission spectroscopy ,EFFICIENT ,02 engineering and technology ,FILMS ,010402 general chemistry ,01 natural sciences ,law.invention ,Ion ,X-ray photoelectron spectroscopy ,law ,Environmental Chemistry ,Perovskite (structure) ,chemistry.chemical_classification ,Renewable Energy, Sustainability and the Environment ,MIXED-HALIDE PEROVSKITE ,021001 nanoscience & nanotechnology ,Pollution ,TIME ,0104 chemical sciences ,Nuclear Energy and Engineering ,chemistry ,Physical chemistry ,Density functional theory ,Scanning tunneling microscope ,0210 nano-technology - Abstract
The incorporation of a certain amount of Cl ions into methylammonium lead iodide (MAPbI3) perovskite films and how these incorporated Cl ions affect the structural and electronic properties of these films have been an intensively studied topic. In this study, we comprehensively investigated Cl incorporation in MAPbI3 at the atomic scale by a combined study of scanning tunneling microscopy, X-ray photoelectron spectroscopy, ultraviolet and inverse photoemission spectroscopy, density functional theory and molecular dynamics calculations. At a Cl concentration of 14.8 ± 0.6%, scanning tunneling microscopy images confirm the incorporation of Cl ions on the MAPbI3 surface, which also corresponds to the highest surface stability of MAPbI3 found from the viewpoint of both thermodynamics and kinetics by density functional theory and molecular dynamics calculations. Our results show that the Cl concentration is crucial to the surface bandgap and stability of MAPbI3.
- Published
- 2021
50. Identifying structure–absorption relationships and predicting absorption strength of non-fullerene acceptors for organic photovoltaics
- Author
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Jun Yan, Xabier Rodríguez-Martínez, Drew Pearce, Hana Douglas, Danai Bili, Mohammed Azzouzi, Flurin Eisner, Alise Virbule, Elham Rezasoltani, Valentina Belova, Bernhard Dörling, Sheridan Few, Anna A. Szumska, Xueyan Hou, Guichuan Zhang, Hin-Lap Yip, Mariano Campoy-Quiles, Jenny Nelson, European Research Council, Ministerio de Ciencia, Innovación y Universidades (España), European Cooperation in Science and Technology, Guangdong Science and Technology Department, and Commission of the European Communities
- Subjects
Technology ,Engineering, Chemical ,SOLAR-CELLS ,EFFICIENCY ,Energy & Fuels ,Chemistry, Multidisciplinary ,FOS: Physical sciences ,Environmental Sciences & Ecology ,Applied Physics (physics.app-ph) ,Engineering ,Environmental Chemistry ,SPECTRA ,CLEAN ENERGY PROJECT ,CANDIDATES ,Condensed Matter - Materials Science ,Science & Technology ,Energy ,STABILITY ,Renewable Energy, Sustainability and the Environment ,DESCRIPTORS ,QUANTUM-CHEMISTRY ,Materials Science (cond-mat.mtrl-sci) ,Physics - Applied Physics ,Pollution ,cond-mat.mtrl-sci ,Chemistry ,Nuclear Energy and Engineering ,DISCOVERY ,Physical Sciences ,POLYMERS ,physics.app-ph ,Life Sciences & Biomedicine ,Environmental Sciences - Abstract
Non-fullerene acceptors (NFAs) are excellent light harvesters, yet the origin of their high optical extinction is not well understood. In this work, we investigate the absorption strength of NFAs by building a database of time-dependent density functional theory (TDDFT) calculations of ∼500 π-conjugated molecules. The calculations are first validated by comparison with experimental measurements in solution and solid state using common fullerene and non-fullerene acceptors. We find that the molar extinction coefficient (εd,max) shows reasonable agreement between calculation in vacuum and experiment for molecules in solution, highlighting the effectiveness of TDDFT for predicting optical properties of organic π-conjugated molecules. We then perform a statistical analysis based on molecular descriptors to identify which features are important in defining the absorption strength. This allows us to identify structural features that are correlated with high absorption strength in NFAs and could be used to guide molecular design: highly absorbing NFAs should possess a planar, linear, and fully conjugated molecular backbone with highly polarisable heteroatoms. We then exploit a random decision forest algorithm to draw predictions for εd,max using a computational framework based on extended tight-binding Hamiltonians, which shows reasonable predicting accuracy with lower computational cost than TDDFT. This work provides a general understanding of the relationship between molecular structure and absorption strength in π-conjugated organic molecules, including NFAs, while introducing predictive machine-learning models of low computational cost., J. N., J. Y., D. P., M. A., F. E., and E. R. thank the European Research Council for support under the European Union's Horizon 2020 research and innovation program (Grant Agreement No. 742708 and 648901). The authors at ICMAB acknowledge financial support from the Spanish Ministry of Science and Innovation through the Severo Ochoa” Program for Centers of Excellence in R&D (No. CEX2019-000917-S), and project PGC2018-095411-B-I00. E. R. is grateful to the Fonds de Recherche du Quebec-Nature et technologies (FRQNT) for a postdoctoral fellowship and acknowledges financial support from the European Cooperation in Science and Technology. M. A. thanks the Engineering and Physical Sciences Research Council (EPSRC) for support via doctoral studentships. F. E. thanks the Engineering and Physical Sciences Research Council (EPSRC) for support via the Post-Doctoral Prize Fellowship. X. R.-M. acknowledges Prof. Olle Inganäs and the Knut and Allice Wallenberg Foundation for funding of his current postdoctoral position. H.-L. Yip thanks the support from Guangdong Major Project of Basic and Applied Basic Research (2019B030302007). The TOC figure and Fig. 5a in the manuscript include freely available resources from Flaticon.com. J. Y. thank Xiaodan Ge for her support., With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).
- Published
- 2022
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