Low temperature intermediate band metallic behavior in Ti implanted Si

© 2012 Elsevier B.V. Authors would like to acknowledge the C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments and the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements. This work was partially supported by the Projects GENESIS-FV (CSD2006-0004) funded by the Spanish Consolider National Programme, NUMANCIA II (S-2009/ENE-1477) funded by the Regional Government of Comunidad de Madrid and grant GR58/08 funded by the Universidad Complutense de Madrid.
Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10(14)-10(16) cm(-2) range. Results of the sample implanted with the 10(16) cm(-2) dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices.
Comunidad de Madrid
Spanish Consolider National Programme - Projects GENESIS-FV
Universidad Complutense de Madrid
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Fac. de Ciencias Físicas
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