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The authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at 626 nm at room temperature. The laser structure is grown on three‐inch wafers by metal organic vapour phase epitaxy. Broad area and ridge waveguide lasers are fabricated. Pulsed broad area laser characterisation on bar level shows laser operation at 20 C heat sink temperature. The authors measured peak lasing wavelengths as short as 625 nm and total maximum output power of both facets up to 1.4 W at an injection current of 2 A. Both, broad area and ridge waveguide lasers show laser operation and CW excitation at room temperature. The ridge waveguide lasers emit output powers of over 90 mW at 626 nm at a maximum injection current of 200 mA with a nearly diffraction‐limited beam profile. [ABSTRACT FROM AUTHOR]

Quantum well nanolasers usually show single‐mode lasing, as gain saturation suppresses emissions in other modes. In contrast, for whispering gallery mode microdisk lasers with GaN quantum wells as active material, above threshold multimode laser emission is observed. This intriguing emission feature is manifested in the fact that several modes simultaneously show the characteristic kink in the input–output curve at the onset of lasing. A quantum theory for nanolasers is used to support the experimental finding and to analyze this behavior in the presence of gain saturation. Coupling effects between neighboring modes are identified as the origin of multimode lasing, which initiate photon exchange between modes via population pulsations similar to classical wave‐mixing effects. A reduction of this type of mode coupling with increasing mode spacing is demonstrated. The results can pave the way for multimode application of nanolasers in integrated photonic circuits. [ABSTRACT FROM AUTHOR]

This paper explores the propagation loss in waveguides on directly bonded InP/Si substrates, using numerical simulations to understand the effect of voids within the waveguide structure. Using COMSOL Multiphysics, we developed a model to simulate light propagation, focusing on how void characteristics such as diameter and angle influence the propagation loss. Our findings reveal a correlation between void dimensions and the increased threshold current density in separate confinement heterostructure multiple quantum well laser diodes, thereby providing insights into optimizing waveguide design for enhanced laser performance on InP/Si substrates. This research underscores the critical role of substrate bonding quality in minimizing internal losses and improving device efficiency. [ABSTRACT FROM AUTHOR]

We present mutual optical coupling in terahertz (THz) quantum cascade wire laser arrays that are flip-chip bonded to a dielectric substrate. The mounting substrate is patterned for individual electrical contacting of each wire laser of the array. The resulting sandwich-like structure supports wire laser modes with a significant part propagating outside the cavity and mediates the long range coupling. The evanescent field part of the modes couples to the adjoining ridge, which, in turn, leads to mutual optical injection-locking between them. We demonstrate this effect for both geometrically similar and dissimilar wire lasers when biased in pulsed operation with temporally overlapping bias pulses. Finite element simulations confirm our measurement results. By applying time-shifted bias pulses to individual array elements, a controllable optical injection seeding of the wire cavity is achieved. We observe intensity modification of the laser modes with changing bias pulse overlap as a result of the injection locking. By choosing both the physical spacing of the laser ridges and the intensity of the seeding laser correctly, the relative intensities of the favored lasing modes are enhanced up to 95 percent. Understanding the coupling in THz wire laser arrays is important for future device improvements in terms of higher continuous-wave operating temperatures through better thermal dissipation, and higher output power and an improved far field due to controlled coupling of their modes. [ABSTRACT FROM AUTHOR]

III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm InAs/GaAs QDs, InP QDs have also aroused interest in lasers emitting at visible wavelengths. Molecular beam epitaxy (MBE) enables the growth of high-density InP/AlGaInP QDs on exact (001)-oriented GaAs substrates but requires a relatively low substrate temperature of <500 °C. The low substrate temperature used for phosphide growth in MBE leads to degraded optical properties and makes post-growth annealing a crucial step to improve the optical quality. Here, we report the exceptional thermal stability of InP/AlGaInP QDs grown using MBE, with up to 50× improvement in room temperature photoluminescence intensity with the optimization of annealing temperature and time. We also demonstrate the room temperature pulsed operation of InP multiple quantum dot (MQD) lasers on GaAs (001) emitting close to 735 nm with Jth values of 499 A/cm2 after annealing, a factor of 6 lower than their as-grown counterparts and comparable to such devices grown by MOCVD. In0.6Ga0.4P single quantum well (SQW) lasers on GaAs (001) also exhibit a substantial reduction in Jth from 340 A/cm2 as-grown to 200 A/cm2 after annealing, emitting at 680 nm under pulsed operation conditions. This work shows that post-growth annealing is essential for realizing record-performance phosphide lasers on GaAs grown by MBE for applications in visible photonics. [ABSTRACT FROM AUTHOR]

Optical frequency combs with equidistant frequency modes have revolutionized metrology and spectroscopy. The most widespread combs consist of periodic pulse trains generated by mode-locked lasers. However, it has recently been demonstrated that most semiconductor lasers based on Fabry–Pérot cavities, such as quantum well laser diodes, quantum cascade lasers, and quantum dot lasers, can enter an unconventional regime without traditional mode-locking mechanisms. The time-domain profile of these self-locked combs features a frequency-modulated (FM) wave with quasi-continuous-wave intensity and near-linear frequency chirp. The observation of the FM mode of operation in lasers with significantly different dynamics suggested that this mode is a fundamental operating state of semiconductor lasers, stemming from a deeper underlying mechanism. Thanks to recent theoretical and experimental advances, the origin of FM behavior has become clear. In this Perspective, we discuss the current status of FM combs in semiconductor lasers based on Fabry–Pérot cavities, focusing on their physical origin, modeling, characterization, bandwidth enhancement, and potential in future applications. [ABSTRACT FROM AUTHOR]

Falling within the safe bands for human eyes, 1550 nm semiconductor lasers have a wide range of applications in the fields of LIDAR, fast-ranging long-distance optical communication, and gas sensing. The 1550 nm human eye-safe high-power tunnel junction quantum well laser developed in this paper uses three quantum well structures connected by two tunnel junctions as the active region; photolithography and etching were performed to form two trenches perpendicular to the direction of the epitaxial layer growth with a depth exceeding the tunnel junction, and the trenches were finally filled with oxides to reduce the extension current. Finally, a 1550 nm InGaAlAs quantum well laser with a pulsed peak power of 31 W at 30 A (10 KHz, 100 ns) was realized for a single-emitter laser device with an injection strip width of 190 μm, a ridge width of 300 μm, and a cavity length of 2 mm, with a final slope efficiency of 1.03 W/A, and with a horizontal divergence angle of about 13° and a vertical divergence angle of no more than 30°. The device has good slope efficiency, and this 100 ns pulse width can be effectively applied in the fields of fog-transparent imaging sensors and fast headroom ranging radar areas. [ABSTRACT FROM AUTHOR]

A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 107 cm−2. The metal‐organic chemical vapor deposition‐grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad‐stripe Fabry–Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm−2 are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single‐facet output power lasing around 854 nm and a 0.314 WA−1 slope efficiency is measured under RT CW operation. After a 10‐min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser. [ABSTRACT FROM AUTHOR]

A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 107 cm−2. The metal‐organic chemical vapor deposition‐grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad‐stripe Fabry–Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm−2 are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single‐facet output power lasing around 854 nm and a 0.314 WA−1 slope efficiency is measured under RT CW operation. After a 10‐min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser.

Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping. Special consideration is given to the contribution of higher bands in wide quantum wells.

Since there are few research reports on semiconductor lasers in the yellow wavelength, this manuscript proposes the design of a semiconductor laser with an excitation wavelength of 589 nm, using a Ge/SiGe substrate, combined with GaInP quantum wells with high Ga composition and AlGaInP series of materials as the main structural layer of the laser. Simulation software is used for feasibility verification, and the effects of different parameters are discussed to optimize the device structure. The effects of interfacial states and electron leakage on the device characteristics are discussed, and a solution to the electron leakage problem is given. The results show that under the influence of the interfacial state, the threshold current of the 589-nm laser reaches 3.3 A, and the output power is about 0.6 W. Through optimization, by adding two layers of AlP electron-blocking layer with a thickness of 5 nm between the P-type cladding and the upper waveguide layer, the concentration of electrons in the P-type cladding layer can be reduced to 1.53 × 1015 cm−3, the threshold current of the device is reduced to 2.13 A, and the output power reaches 0.87 W. [ABSTRACT FROM AUTHOR]

A systematic study of a series of InGaAs/GaAs lasers in the 1–1.3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots. [ABSTRACT FROM AUTHOR]

It has been experimentally and theoretically analyzed that noise-induced excitability in quantum well and quantum dot semiconductor laser systems usually produces sharp spike patterns of non-uniform amplitude. In this paper, we experimentally record that a quantum cascade oscillator injected externally with a monochromatic laser beam exhibits a series of highly uniform spike trains, which occur in the proximity of the saddle-node bifurcation. Theoretical analysis based on a properly designed single-mode rate equation model endowed with quantum noise reveals that this high uniformity has its primary origin in the ultrashort carrier lifetime of the quantum cascade laser gain medium that is typically close to 1 ps. [ABSTRACT FROM AUTHOR]

We describe an all-optical method to achieve—prior to further advanced processing steps—a perfect match of the relevant wavelength-sensitive parameters of an InGaN/GaN semiconductor distributed feedback laser. Instead of permanently etching and epitaxially over-growing a waveguide-based diffraction grating for the definition of an index-coupled distributed feedback laser, we suggest here—by employing a powerful ultraviolet pump laser—a non-permanent, photoinduced generation of an optical diffraction grating. The resulting complex refractive index modulation then forms a gain-coupled distributed feedback laser. Such an approach has the advantage of remaining flexible as long as possible—both in terms of the correct grating period and the ideal coupling constant. This flexibility is maintained until the definitive etch and the epitaxial over-growth of the diffraction grating are completed. Such devices can—like their dye laser counterparts in the early seventies—also be used as ultra-broadly tunable single-mode sources. [ABSTRACT FROM AUTHOR]

The performance of ultraviolet (UV) laser diodes (LDs) with a low Al mole fraction AlGaN cladding layer was investigated by varying the thicknesses of the waveguide layer. It is found that (1) the loss of carriers in the waveguide layer is much larger than that in blue or green LDs due to the shallower quantum well and consequently a weaker carrier confinement of UV lasers. (2) Carrier loss in the waveguide layer can be suppressed by using a thinner waveguide layer. Therefore, the threshold current of LDs can be reduced. (3) The ultraviolet GaN/AlGaN single quantum well laser diodes lasing at 366 nm are fabricated by using relatively thin AlGaN waveguide layers and low Al mole fraction AlGaN cladding layers. [ABSTRACT FROM AUTHOR]

The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially of those on an on-axis Si (001) substrate, is of great importance now a days for the development of Si-based photonic and even optoelectronic integrated circuits and is really quite challenging. As an experimental advancement, mainly by inserting a pair of InAlAs strained layers separately into the upper and lower AlGaAs cladding layers to effectively prevent the formation of the in-plane gliding misfit-dislocations within the boundary planes of the active region, the longest room-temperature and continuous-wave lifetime of the InGaAs/AlGaAs quantum well lasers on an on-axis Si (001) substrate with a cavity length of 1500 µm and a ridge width of 20 µm has been prolonged from a very initial record of ∼90 s to the present length longer than 31 min. While, the highest continuous-wave operation temperature of another one with a cavity length of 1000 µm and a ridge width of 10 µm has been shown as 103 °C with an extracted characteristic temperature of 152.7 K, further enhancement of the device reliability is still expected and would mainly depend on the level of the threading-dislocation-density reduction in the GaAs/Si virtual substrate. [ABSTRACT FROM AUTHOR]

In this paper, we present a large-signal and switching analysis for the Heterojunction Bipolar Transistor Laser (HBTL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for carrier transport, nonlinear optical gain, and optical confinement factor, we have simulated the large-signal response of the HBTL in relatively low and high modulation frequencies. Our results predict that for multiple quantum well (MQW) structures at low frequencies, there should not be a difference in either the carrier density or the photon density. However, the carrier concentration can be differently distributed between subsequent wells in the case of a high speed yet large-signal input. This leads to increased linewidth instead as it depends on ΔNqw. We show the effect of different structural parameters on the switching behavior by performing a switching analysis of the single quantum well and MQW structures using computationally efficient numerical methods. A set of coupled rate equations are solved to investigate the large-signal and switching behavior of MQW-HBTL. Finally, to have a comprehensive judgment about this optoelectronic device, we introduce a relative performance factor taking into account all the optoelectronic characteristics such as the output power, ac current gain, modulation bandwidth, and base threshold current, as well as turn-on time in order to design a suitable TL for optoelectronic integrated circuits. [ABSTRACT FROM AUTHOR]

We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells. [ABSTRACT FROM AUTHOR]

In this study, the operational durability of laser diodes (LDs) with CdSe quantum dot (QD) active region is examined through a detailed comparison with its BeZnCdSe quantum well (QW) counterpart. To focus on the impact on the difference caused by the nature of the active region, other layers such as the waveguide layer, cladding layer, and contact layer, which influence the mode profile of the optical confinement and electrical properties, are maintained under the same condition. Although the threshold current of the CdSe QD LD is higher than that of the BeZnCdSe QW LD by a factor of 1.6–1.7 under a fresh condition, the degradation of the former proceeds much more slowly than that of the latter. This is confirmed by a reliability test conducted under the current injection condition both below and above the lasing threshold. The result indicates that the stronger carrier localization in the CdSe QDs compared to that in the BeZnCdSe QWs prevents the interaction with remote defects in the active layer. Consequently, the CdSe QD LD is less sensitive to degradation due to recombination-enhanced defect reactions. [ABSTRACT FROM AUTHOR]

Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown on c-plane GaN substrate. It is found that AlGaN IL improves InGaN QW interface sharpness, whereas it does not suppress the localization effect, and moreover, it leads to increasing nonradiative recombination centers in the active region of green InGaN LD. We believe AlGaN IL has advantages and disadvantages to green InGaN LD structures. The advantage is to suppress indium (In) surface segregation, but the disadvantage is that it covers In-rich clusters, which evolve into dark spots during the growth of p-type layers of green LD structures. [ABSTRACT FROM AUTHOR]

Using terahertz time-domain spectroscopy (THz-TDS), we have detected resonance frequencies of plasmon oscillations excited in heterostructures with multiple InxGa1 –xN/GaN quantum wells by laser pulses with a duration of 130 fs in the temperature range from 90 to 170 K. The fast Fourier transform of temporal forms of terahertz pulses has made it possible to obtain frequency spectra of the power and of the phase shift of terahertz radiation, the interpretation of which has allowed us to estimate the quasi-momentum relaxation time (τ = 10–12 s), mobility (μ = 4 × 103 cm2/(V s)), and effective mass (m* = 0.45m) of majority charge carriers in these heterostructures. Based on the frequency spectra of power and phase shift of terahertz radiation, we have obtained the temperature dependences of the effective mass and relaxation time of the quasi-momentum of a 2D electron gas (2DEG). The 2DEG mobility value obtained by the THz-TDS method is in good agreement with the Hall measurement data. [ABSTRACT FROM AUTHOR]

Silicon photonics is the core technology in the post-Moore ’ s era, characterized by the deep integration of optoelectronics and microelectronics. Silicon photonics can leverage the existing complementary metal-oxide-semiconductor (CMOS) infrastructure to fabricate low power consumption, high integration density, fast transmission speed, and highreliability silicon photonic chips which are widely employed in data centers and communication systems. At present, most optoelectronic devices like Si-based photodetectors and Si-based optical modulators have realized on-chip integration except for the Si-based lasers as essential light sources. The directly epitaxial III-V materials on silicon substrates is recognized as one of the most promising solutions to achieve low-cost and large-size monolithic integration of Si-based lasers, still facing many significant challenges. In this paper, the research progress of Si-based light sources is presented from the aspects of directly epitaxial on-axis III-V/ Si (001) substrates, on-axis Si-based laser materials, epitaxy technology and monolithic integration at first. Then the achievements in Si-based directly epitaxial quantum well lasers and quantum dot lasers in our group are reported in detail, including the growth of antiphase domains-free GaAs/ Si (001) substrates, epitaxial materials of InGaAs/ AlGaAs quantum well lasers and InAs/ GaAs quantum dot lasers, and fabrication of novel coplanar electrode structures of silicon photonic chips in parallel mode. [ABSTRACT FROM AUTHOR]

Nanowire lasers are sought for near‐field and on‐chip photonic applications as they provide integrable, coherent, and monochromatic radiation: the functional performance (threshold and wavelength) is dependent on both the opto‐electronic and crystallographic properties of each nanowire. However, scalable bottom‐up manufacturing techniques often suffer from inter‐nanowire variation, leading to differences in yield and performance between individual nanowires. Establishing the relationship between manufacturing controls, geometric and material properties, and the lasing performance is a crucial step toward optimisation; however, this is challenging to achieve due to the interdependance of such properties. Here, a high‐throughput correlative approach is presented to characterise over 5000 individual GaAsP/GaAs multiple quantum well nanowire lasers. Fitting the spontaneous emission provides the threshold carrier density, while coherence length measurements determine the end‐facet reflectivity. The performance is intrinsically related to the width of a single quantum well due to quantum confinement and bandfilling effects. Unexpectedly, there is no strong relationship between the properties of the lasing cavity and the threshold: instead the threshold is negatively correlated with the non‐radiative recombination lifetime of the carriers. This approach therefore provides an optimisation strategy that is not accessible through small‐scale studies. [ABSTRACT FROM AUTHOR]

We propose a type-II AlInN/ZnGeN2 quantum well (QW) structure serving as the active region for ultraviolet (UV) laser diodes. A remarkably low threshold current density can be achieved using the type-II AlInN/ZnGeN2 QW structure, providing a pathway for the realization of electrically-driven nitride-based semiconductor UV laser diodes. ZnGeN2 has both a very similar lattice constant and bandgap to GaN. Its large band offsets with GaN enable the potential of serving as a hole confinement layer to increase the electron-hole wavefunction overlap in the active region. In this study, we investigate the spontaneous emission and gain properties of type-II AlInN/ZnGeN2 QWs with different ZnGeN2 layer thicknesses. Our findings show that the use of ZnGeN2 layers in the active region provides a significant improvement in hole carrier confinement, which results in ∼5 times enhancement of the electron-hole wave function overlap. Such an enhancement provides the ability to achieve a significant increase (∼6 times) in the spontaneous emission rate and material gain, along with a remarkable reduction in threshold carrier density compared to the conventional AlGaN-based QW design, which is essential for practical UV laser diodes. [ABSTRACT FROM AUTHOR]

Terahertz (THz) quantum-cascade lasers (QCLs) are currently unparalleled for high-resolution spectroscopy of very sharp absorption lines (linewidths below 100 MHz) in the range between 2 and 5.4 THz. Since the frequency range accessible by a single QCL is determined by its typically very limited tuning range, a particular QCL has to be fabricated for each specific application. We quantitatively analyze the frequencies of the modes in THz QCLs with a Fabry–Pérot resonator as a function of its length taking into account waveguide dispersion. Based on these results, we develop a process based on mechanical polishing of the front facet to adjust the emission frequency with a precision of 1 GHz. The demonstrated process makes it possible to reliably fabricate THz QCLs for the spectroscopy of very sharp absorption lines. [ABSTRACT FROM AUTHOR]

Terahertz (THz) quantum-cascade lasers (QCLs) are narrow band, high-power, and frequency-agile sources. These properties make them attractive for applications in high-resolution molecular and atomic spectroscopy. In the past few years, various techniques and methods regarding high-resolution spectroscopy with THz QCLs have been developed, namely, direct absorption spectroscopy, detection schemes such as wavelength and frequency modulation, differential spectroscopy, photoacoustic spectroscopy, and heterodyne spectroscopy. We briefly review the most relevant technological and methodological advances in this field, and we discuss perspectives and future directions. [ABSTRACT FROM AUTHOR]

We present InAsP multi-functional metamorphic buffers (MFMBs) designed to enable mid-infrared Type-I InAs quantum well (QW) lasers on InP substrates. InAsxP1-x/InP MFMBs with x = 0.5–0.7 provide a versatile platform for Type-I InAs QW laser diodes in the mid-infrared regime by bridging the lattice mismatch between InAs and InP while simultaneously functioning as the bottom cladding layer for laser structures. Cross-sectional transmission electron microscopy shows that InAs multi-QWs can be grown as thick as 15 nm without forming misfit dislocations on an InAs0.7P0.3 buffer, enabling room-temperature photoluminescence at wavelengths >3 μm. We then compare the performance of lasers grown on InAsP MFMBs and show that the temperature dependence strongly depends on the energy band offset between the QW and the metamorphic InAsP waveguides. Future work could improve performance at longer wavelengths by investigating the use of electron blocking layers and adjusting the device design to minimize parasitic heating. [ABSTRACT FROM AUTHOR]

Thermal profiles of a single-element quantum cascade laser (QCL) and a five-element QCL array at different bias currents, under quasi-continuous-wave (QCW) conditions, are obtained using the charge-coupled device (CCD)-based thermoreflectance imaging technique. Peak temperature changes of 55 K and 105 K are measured on the single-element QCL (operating at 1.2 A) and the central element of the QCL array (operating at 4.2 A), respectively. The average facet temperature of the single QCL device shows a linear relationship with the dissipated power, indicating an effective thermal resistance of Rth = 3.0 ± 0.2 K/W (7%) for the device. The thermal transient behavior of the single QCL device, in response to a 35 μs-wide heating pulse, is also measured. From the transient curve, an effective thermal time constant of τ th = 9.5 ± 0.4 μs (4%) is obtained. Experimental results are compared to the results obtained from heat-transfer models for both the single-element and array devices. Thermal profiles show a thermal lensing effect at the facet of the single-element QCL. In the array device, a more pronounced heating is observed at the center of the device while the temperature gradually decreases away from the central element. [ABSTRACT FROM AUTHOR]

InAs quantum dot and dash gain media demonstrate performance benefits, such as lower threshold current densities and reduced temperature sensitivity over quantum wells for lasers operating in the C-band telecommunications window. Quantum dashes are of much interest for their higher gain over quantum dots due to an increased density of states. We combine experimental results and simulations to understand how quantum dash morphology and composition can be used to tune the emission wavelengths of these nanoparticles. Atomic force microscopy (AFM) analysis is performed to determine the effect of growth temperature and sublayer type on InAs/InGaAsP/InP nanoparticle morphology and homogeneity. Uncapped InAs nanoparticles grown by CBE on a GaAs sublayer will have dash-like geometries with heights up to 2.36 nm for growth temperatures of 500–540 °C. GaP sublayers will induce taller quantum dots except for a growth temperature of 530 °C, where quantum dashes form. The dimensions extracted from AFM scans are used in conjunction with photoluminescence data to guide parabolic band simulations of an InAs quantum dash with a GaP or GaAs sublayer and InP cap buried within InGaAsP. The calculated emission energy of a buried 30 × 300 nm quantum dash decreases by ∼100 meV for increasing heights from 1.5 to 2.5 nm, or increases by ∼100 meV by addition of 20% phosphorus in the dash and wetting layers. Modifying the quantum dash height and leveraging the As/P intermixing that occurs between the InAs and InP layers are, thus, most effective for wavelength tuning. [ABSTRACT FROM AUTHOR]

Mid‐wave infrared (MIR, 3–5 µm) optical frequency combs (OFC) are of critical importance for spectroscopy of fundamental molecular transitions in space and terrestrial applications. Although in this band OFCs can be obtained via supercontinuum or difference frequency generation using optical pumping schemes, unprecedented source miniaturization, and monolithic design are unique to electrically‐pumped semiconductor laser structures. To date, high‐brightness OFC generation in this region has been demonstrated in quantum‐ and interband cascade lasers (QCL/ICL), yet with sub‐optimal spectral properties. Here, an MIR quantum well diode laser (QWDL) OFC is shown, whose excellent spectral uniformity, narrow optical linewidths, and milliwatt optical power are obtained at a fraction of a watt of power consumption. The continuously tunable source offers ≈1 THz of optical span centered at 3.04 µm, and a repetition rate of 10 GHz. As a proof‐of‐principle, a directly‐battery‐operated MIR dual‐comb source is shown with almost 0.5 THz of optical coverage accessible in the electrical domain in microseconds. These results indicate the high suitability of QWDL OFCs for future chip‐based real‐time sensing systems in the mid‐infrared. [ABSTRACT FROM AUTHOR]

This study aimed to simulate straining turbulent flow empirically, having direct similarities with vast naturally occurring flows and engineering applications. The flow was generated in 100 < R e λ < 500 and seeded with passive and inertial particles. Lagrangian particle tracking and particle image velocimetry were employed to extract the dynamics of particle statistics and flow features, respectively. The studies for axisymmetric straining turbulent flow reported that the strain rate, flow geometry, and gravity affect particle statistics. To practically investigate mentioned effects in the literature, we present the behavior of both passive and inertial particles from the novel experiment conducted on initially homogeneous turbulence undergoing a sudden axisymmetric expansion. We represent the result with two different mean strains and Reynolds–Taylor microscales. However, this study, in contrast to the previous studies, considers the fields of inertial particles in the presence of gravity. The result discloses that the novel designed and conducted experiments simulated the flow satisfactorily. Then, the particle behavior in such flow showed the effectiveness of the flow distortion on particle dynamics such as velocity root mean square and Reynolds stress. Straining turbulence flow is subject to many industrial applications and physics studies, such as stagnation points, external flow around an airfoil, internal flow in changeable cross section pipe, expansion in the engine mixing chamber, and leading edge erosion. This study's conclusion could apply constructively to these areas. [ABSTRACT FROM AUTHOR]

In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of power saturation at the high injection level even in the absence of thermal roll-over. Laser diodes based on extreme, double/triple asymmetric (EDAS/ETAS) epitaxial structures show great potentials in high-power and high-efficiency applications owing to the reduced series resistance, low optical loss, and suppressed power saturation. In this paper, a novel semi-analytical calculation method is proposed to systematically analyze the impact of LSHB and TPA effects on the output characteristics of EDAS/ETAS-based broad area lasers (BALs). By leveraging the feature that it is flexible to adjust the confinement factor of ETAS epitaxial structure without compromising the internal loss and resistance level, the laser parameters are first optimized to minimize power saturation of ETAS-based BALs under pulsed and Continuous Wave (CW) operation.

Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in air and subsequently cleaned using atomic hydrogen with RWLs that are cleaved in ultra-high vacuum. RWLs cleaved in ultra-high vacuum show a superior performance and reach power densities up to 58 MW/cm2 under extended continuous wave operation at 1064 nm. This is attributed to the reduction of defects at the interface between ZnSe and the cleaved facet as evidenced by transmission electron microscopy and X-ray diffraction.

Abstract In this letter, the authors present a monolithic edge emitting diode laser intended as a potential key component for the generation of terahertz radiation in a compact time‐domain spectroscopy system. The 6 mm long multi‐section InGaAsP double quantum well (DQW) laser, featured with a 3.6 mm long tapered (TP) gain section, operates at a wavelength of ∼832 nm and generates pulses at a fundamental repetition rate of ∼6.3 GHz in passive mode‐locking operation. Pulses with 2.6 ps width and 40 W peak power are measured. The generated pulses are not bandwidth‐limited and should be compressible for further applications.

Abstract The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 µm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.

The subject of this study presents an employed method in deep learning to create a model and predict the following period of turbulent flow velocity. The applied data in this study are extracted datasets from simulated turbulent flow in the laboratory with the Taylor microscale Reynolds numbers in the range of 90 < R λ < 110. The flow has been seeded with tracer particles. The turbulent intensity of the flow is created and controlled by eight impellers placed in a turbulence facility. The flow deformation has been conducted via two circular flat plates moving toward each other in the center of the tank. The Lagrangian particle-tracking method has been applied to measure the flow features. The data have been processed to extract the flow properties. Since the dataset is sequential, it is used to train long short-term memory and gated recurrent unit model. The parallel computing machine DEEP-DAM module from Juelich supercomputer center has been applied to accelerate the model. The predicted output was assessed and validated by the rest of the data from the experiment for the following period. The results from this approach display accurate prediction outcomes that could be developed further for more extensive data documentation and used to assist in similar applications. The mean average error and R2 score range from 0.001–0.002 and 0.9839–0.9873, respectively, for both models with two distinct training data ratios. Using GPUs increases the LSTM performance speed more than applications with no GPUs. [ABSTRACT FROM AUTHOR]

SiGeSn material is of great interest for the development of all-group-IV lasers on a Si substrate. While GeSn-based lasers have been reported worldwide, probing the fundamental limit to lase is highly desirable to reveal the material capability as a gain medium. In this work, three GeSn-based multiple quantum well lasers, with four wells, six wells, and ten wells, were characterized. The four-well device cannot achieve lasing due to the thin active region (thickness of 81 nm), resulting in insufficient optical confinement factor. With thicker active region, both six-well (92 nm) and ten-well (136 nm) devices show clear lasing output. The ten-well sample exhibits a higher lasing temperature of 90 K. The finding of this work reveals the fundamental limit of the required optical confinement factor to achieve lasing for a Fabry–Pérot cavity edge emitting laser devices. [ABSTRACT FROM AUTHOR]

To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a favorable option due to the unique defect engineering and resultant bufferless structure. Among the intensively investigated selective epitaxy methods, lateral aspect ratio trapping generates III-V devices in the same plane as the Si layer enabling efficient coupling with Si waveguides. Here, we demonstrate telecom InGaAs/InP quantum well lasers selectively grown on commercial silicon-on-insulator substrates with an in-plane structure using a simple structural design and growth scheme without any regrowth steps. Leveraging on the lateral aspect ratio trapping technique, uniform quantum wells with high crystalline quality were obtained and shown by comprehensive material characterizations. Room temperature pulsed lasing was achieved on the fabricated micro-ring lasers with a low threshold of 20 μJ/cm2. The results present a crucial step towards electrically pumped lasers at telecom band as well as fully integrated Si-photonics. [ABSTRACT FROM AUTHOR]

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers, including four sets of five-period strained-layer superlattices and the laser-structural layers, were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry–Pérot ones with a stripe width of 21.5 μm and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm, and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility. [ABSTRACT FROM AUTHOR]

A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz. [ABSTRACT FROM AUTHOR]

We present experimental studies on low-temperature ( T = 4.2 K ) carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi ranging from 6 to 8%. The photoreflectance experiment revealed the QW bandgap evolution with - 33 ± 1 meV / at % Bi, which resulted in the bandgap tunability roughly between 629 and 578 meV , setting up the photon emission wavelength between 1.97 and 2.2 μ m . The photoluminescence experiment showed a relatively small 3–10 meV Stokes shift regarding the fundamental QW absorption edge, indicating the exciton localisation beneath the QW mobility edge. The localised state's distribution, being the origin of the PL, determined carrier dynamics in the QWs probed directly by the time-resolved photoluminescence and transient reflectivity. The intraband carrier relaxation time to the QW ground state, following the non-resonant excitation, occurred within 3–25 ps and was nearly independent of the Bi content. However, the interband relaxation showed a strong time dispersion across the PL emission band and ranging nearly between 150 and 950 ps , indicating the carrier transfer among the localised state's distribution. Furthermore, the estimated linear dispersion variation parameter significantly decreased from Δ τ ≈ 20 to 10 ps / meV with increasing the Bi content, manifested the increasing role of the non-radiative recombination processes with Bi in the QWs. [ABSTRACT FROM AUTHOR]

In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of power saturation at the high injection level even in the absence of thermal roll-over. Laser diodes based on extreme, double/triple asymmetric (EDAS/ETAS) epitaxial structures show great potentials in high-power and high-efficiency applications owing to the reduced series resistance, low optical loss, and suppressed power saturation. In this paper, a novel semi-analytical calculation method is proposed to systematically analyze the impact of LSHB and TPA effects on the output characteristics of EDAS/ETAS-based broad area lasers (BALs). By leveraging the feature that it is flexible to adjust the confinement factor of ETAS epitaxial structure without compromising the internal loss and resistance level, the laser parameters are first optimized to minimize power saturation of ETAS-based BALs under pulsed and Continuous Wave (CW) operation. [ABSTRACT FROM AUTHOR]

Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in air and subsequently cleaned using atomic hydrogen with RWLs that are cleaved in ultra-high vacuum. RWLs cleaved in ultra-high vacuum show a superior performance and reach power densities up to 58 MW/cm2 under extended continuous wave operation at 1064 nm. This is attributed to the reduction of defects at the interface between ZnSe and the cleaved facet as evidenced by transmission electron microscopy and X-ray diffraction. [ABSTRACT FROM AUTHOR]

By including elements of the density matrix formalism, the semiclassical ensemble Monte Carlo method for carrier transport is extended to incorporate incoherent tunneling, known to play an important role in quantum cascade lasers (QCLs). In particular, this effect dominates electron transport across thick injection barriers, which are frequently used in terahertz QCL designs. A self-consistent model for quantum mechanical dephasing is implemented, eliminating the need for empirical simulation parameters. Our modeling approach is validated against available experimental data for different types of terahertz QCL designs. [ABSTRACT FROM AUTHOR]

A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was comprehensively characterized. Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified. [ABSTRACT FROM AUTHOR]

High barrier AlxGa1–xAs terahertz quantum cascade structures with AlAs compositions up to 30% are studied. The influence of thermally excited leakage scattering to higher bound energy states and decoherence effects are investigated using a density matrix method where the pure dephasing time is self-consistently solved. The lattice temperature dependence of the light output in diagonal optical transition structures is calculated and shown to be consistent with experiment. Scattering from the upper lasing state to higher bound energy states is found to have minimal effects, and rather the decoherence from the calculated reduction of the pure dephasing time due to the impurity interaction is primarily responsible for the temperature dependence of a recently reported structure. This shows that the effects from an increased impurity interaction due to thinner barriers and different well dimensions can dominate over that from the increased interface roughness interaction due to higher potentials. [ABSTRACT FROM AUTHOR]

The focused ion beam milling tool was used to convert a GaSb-based broad area gain-guided quantum well laser device with a standard Fabry-Pérot cavity into one with an unstable resonator cavity. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Pérot cavity device, where the coherency of the beam is severely disrupted by filamentation, the unstable resonator cavity device exhibits an ~2× diffraction limited beam. The relatively small penalty in slope efficiency demonstrates that a much higher brightness can be reached in this class of broad area devices. [ABSTRACT FROM AUTHOR]