用于单片集成的硅基外延Ⅲ-Ⅴ族量子阱和 量子点激光器研究.

Silicon photonics is the core technology in the post-Moore ’ s era, characterized by the deep integration of optoelectronics and microelectronics. Silicon photonics can leverage the existing complementary metal-oxide-semiconductor (CMOS) infrastructure to fabricate low power consumption, high integration density, fast transmission speed, and highreliability silicon photonic chips which are widely employed in data centers and communication systems. At present, most optoelectronic devices like Si-based photodetectors and Si-based optical modulators have realized on-chip integration except for the Si-based lasers as essential light sources. The directly epitaxial III-V materials on silicon substrates is recognized as one of the most promising solutions to achieve low-cost and large-size monolithic integration of Si-based lasers, still facing many significant challenges. In this paper, the research progress of Si-based light sources is presented from the aspects of directly epitaxial on-axis III-V/ Si (001) substrates, on-axis Si-based laser materials, epitaxy technology and monolithic integration at first. Then the achievements in Si-based directly epitaxial quantum well lasers and quantum dot lasers in our group are reported in detail, including the growth of antiphase domains-free GaAs/ Si (001) substrates, epitaxial materials of InGaAs/ AlGaAs quantum well lasers and InAs/ GaAs quantum dot lasers, and fabrication of novel coplanar electrode structures of silicon photonic chips in parallel mode. [ABSTRACT FROM AUTHOR]