1. Dual-enhancement of microwave dielectric properties and sintering performance of MgF2 doped MgTi1-x(Mn1/3Sb2/3)xO3 ceramics.
- Author
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Huang, Chun-e, Wang, Zixian, and Yang, Jian
- Subjects
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DIELECTRIC properties , *VALENCE bonds , *QUALITY factor , *CHEMICAL bonds , *CERAMICS , *SINTERING , *MICROWAVES - Abstract
High Q·f value and temperature-stable MgF 2 -doped MgTi 1-x (Mn 1/3 Sb 2/3) x O 3 ceramics have been successfully prepared by the solid-state reaction method. Microwave dielectric properties and sintering performance of MgF 2 -doped MgTi 1-x (Mn 1/3 Sb 2/3) x O 3 ceramics were systematically investigated by the classic theory and the P-V-L theory. The results show that MgF 2 doping and complex cation (Mn 1/3 Sb 2/3)4+ substitution not only further reduces the sintering temperature of MgTiO 3 ceramics from 1400 °C to 1250 °C, but also effectively improves the quality factor from 110210 GHz to 228713 GHz and adjust the τf value from −53.55 ppm/°C to −20.42 ppm/°C. The ionicity, the bond valence and octahedral distortion confirmed that Ti/(Mn 1/3 Sb 2/3)-O bonds exert a greater influence on microwave dielectric properties than Mg-O bonds in MgTiO 3 ceramics, which provides a guide to further improve the microwave dielectric performances. The optimal microwave dielectric properties: ε r = 18.8 ± 0.28, Q·f = 228713 ± 2500 GHz (at 6.08 GHz), τ f = (−20.42 ± 1.1) ppm/°C were achieved for 3 wt% MgF 2 doped MgTi 0.99 (Mn 1/3 Sb 2/3) 0.01 O 3 ceramics sintered at 1250 °C. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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