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Sintering Behavior, Crystal Structure, and Microwave Dielectric Properties of Li2Y9(SiO4)6O2F Ceramics with Near-Zero τf.
- Source :
- Journal of Electronic Materials; Jun2024, Vol. 53 Issue 6, p3223-3230, 8p
- Publication Year :
- 2024
-
Abstract
- This study delves into the microwave dielectric properties of Li<subscript>2</subscript>Y<subscript>9</subscript>(SiO<subscript>4</subscript>)<subscript>6</subscript>O<subscript>2</subscript>F ceramics, synthesized using the conventional solid-state method. By employing x-ray diffraction analysis and meticulous data refinement across various temperatures, we unequivocally confirm the hexagonal crystal structure of Li<subscript>2</subscript>Y<subscript>9</subscript>(SiO<subscript>4</subscript>)<subscript>6</subscript>O<subscript>2</subscript>F ceramics. The refined lattice parameters, observed at a sintering temperature of 1275°C, exhibit a = b = 9.33318 Å, c = 6.71725 Å, with a corresponding unit cell volume of V = 506.73529 Å<superscript>3</superscript>. In-depth scrutiny of the microstructure of the ceramics' grains using scanning electron microscopy (SEM) reveals an optimal relative density of 96.2%. Subsequently, the study explores the impact of porosity, packing fraction, relative density, and Si-O bond valence (V<subscript>Si-O</subscript>) on the microwave dielectric properties of Li<subscript>2</subscript>Y<subscript>9</subscript>(SiO<subscript>4</subscript>)<subscript>6</subscript>O<subscript>2</subscript>F ceramics. Notably, the Li<subscript>2</subscript>Y<subscript>9</subscript>(SiO<subscript>4</subscript>)<subscript>6</subscript>O<subscript>2</subscript>F ceramic sintered at 1275°C demonstrates superior performance metrics, boasting an ε<subscript>r</subscript> value of 14.28, a Q × f product of 16,760 GHz (at f = 9.4 GHz), and a temperature coefficient of frequency (τ<subscript>f</subscript>) at 3.14 ppm/°C. This comprehensive investigation contributes valuable insights into optimizing the microwave dielectric characteristics of Li<subscript>2</subscript>Y<subscript>9</subscript>(SiO<subscript>4</subscript>)<subscript>6</subscript>O<subscript>2</subscript>F ceramics for potential applications in advanced electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 53
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 178046886
- Full Text :
- https://doi.org/10.1007/s11664-024-11045-5