1. Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma.
- Author
-
Mahata, Chandreswar, So, Hyojin, Yang, Seyeong, Ismail, Muhammad, Kim, Sungjun, and Cho, Seongjae
- Subjects
- *
OXYGEN plasmas , *ELECTRON traps , *LONG-term potentiation , *ION migration & velocity , *VOLTAGE control , *ENERGY consumption - Abstract
Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled the establishment of a stable multilevel memory state, allowing for RESET voltage control and non-degradable data endurance. The ITO/InGaZnO interface governs the migration of oxygen ions and redox reactions within the switching layer. Voltage–stress-induced electron trapping and oxygen vacancy formation were observed before conductive filament electroforming. This device mimicked biological synapses, demonstrating short- and long-term potentiation and depression through electrical pulse sequences. Modulation of post-synaptic currents and pulse frequency-dependent short-term potentiation were successfully emulated in the InGaZnO-based artificial synapse. The ITO/InGaZnO/ITO memristor exhibited spike–amplitude-dependent plasticity, spike–rate-dependent plasticity, and potentiation–depression synaptic learning with low energy consumption, making it a promising candidate for large-scale integration. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF