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Synapse-specific structural plasticity that protects and refines local circuits during LTP and LTD.

Authors :
Harris, Kristen M.
Kuwajima, Masaaki
Flores, Juan C.
Zito, Karen
Source :
Philosophical Transactions of the Royal Society B: Biological Sciences. 7/29/2024, Vol. 379 Issue 1906, p1-12. 12p.
Publication Year :
2024

Abstract

Synapses form trillions of connections in the brain. Long-term potentiation (LTP) and long-term depression (LTD) are cellular mechanisms vital for learning that modify the strength and structure of synapses. Three-dimensional reconstruction from serial section electron microscopy reveals three distinct pre- to post-synaptic arrangements: strong active zones (AZs) with tightly docked vesicles, weak AZs with loose or non-docked vesicles, and nascent zones (NZs) with a postsynaptic density but no presynaptic vesicles. Importantly, LTP can be temporarily saturated preventing further increases in synaptic strength. At the onset of LTP, vesicles are recruited to NZs, converting them to AZs. During recovery of LTP from saturation (1–4 h), new NZs form, especially on spines where AZs are most enlarged by LTP. Sentinel spines contain smooth endoplasmic reticulum (SER), have the largest synapses and form clusters with smaller spines lacking SER after LTP recovers. We propose a model whereby NZ plasticity provides synapse-specific AZ expansion during LTP and loss of weak AZs that drive synapse shrinkage during LTD. Spine clusters become functionally engaged during LTP or disassembled during LTD. Saturation of LTP or LTD probably acts to protect recently formed memories from ongoing plasticity and may account for the advantage of spaced over massed learning. This article is part of a discussion meeting issue 'Long-term potentiation: 50 years on'. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09628436
Volume :
379
Issue :
1906
Database :
Academic Search Index
Journal :
Philosophical Transactions of the Royal Society B: Biological Sciences
Publication Type :
Academic Journal
Accession number :
178788015
Full Text :
https://doi.org/10.1098/rstb.2023.0224