1. Silicon Chemical Vapor Deposition Process Using a Half-Inch Silicon Wafer for Minimal Manufacturing System
- Author
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Hitoshi Habuka, Shinichi Ikeda, Shiro Hara, and Ning Li
- Subjects
concentrated infrared flux ,Chemical vapour deposition ,Materials science ,Chlorine trifluoride ,Silicon ,business.industry ,Infrared ,chemistry.chemical_element ,Reflector (antenna) ,Chemical vapor deposition ,Physics and Astronomy(all) ,chemistry.chemical_compound ,Flux (metallurgy) ,chemistry ,Thermal ,chlorine trifluoride ,Optoelectronics ,Wafer ,business - Abstract
A chemical vapor deposition reactor for producing thin silicon films was designed and developed for achieving a new electronic device production system, the Minimal Manufacturing, using a half-inch wafer. This system requires a rapid process by a small footprint reactor. This was designed and verified by employing the technical issues, such as (i) vertical gas flow, (ii) thermal operation using a highly concentrated infrared flux, and (iii) reactor cleaning by chlorine trifluoride gas. The combination of (i) and (ii) could achieve a low heating power and a fast cooling designed by the heat balance of the small wafer placed at a position outside of the reflector. The cleaning process could be rapid by (iii). The heating step could be skipped because chlorine trifluoride gas was reactive at any temperature higher than room temperature.
- Published
- 2013
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